Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2
Journal Article
·
· npj 2D Materials and Applications
- Univ. of Washington, Seattle, WA (United States). Dept. of Physics
- Univ. of Hong Kong (China). Dept. of Physics. Center of Theoretical and Computational Physics
- Univ. of Arizona, Tucson, AZ (United States). Dept. of Physics
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
- Univ. of Michigan, Ann Arbor, MI (United States). Center for Photonics and Multiscale Nanomaterials. Dept. of Physics
- Univ. of Washington, Seattle, WA (United States). Dept. of Physics. Dept. of Materials Science and Engineering
In monolayer semiconductor transition metal dichalcogenides, the exciton–phonon interaction strongly affects the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M), suggesting the significance of zone-edge acoustic phonons and hence the deformation potential in exciton-phonon coupling in MoSe2. Moreover, oscillatory behavior is observed in the steady-state emission linewidth and in time-resolved PLE data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Hong Kong (China); Univ. of Washington, Seattle, WA (United States)
- Sponsoring Organization:
- Croucher Foundation, Hong Kong (China); National Science Foundation (NSF) (United States); Research Grants Council (RGC), Hong Kong (China); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); University Grants Committee (UGC), Hong Kong (China)
- Grant/Contract Number:
- AC05-00OR22725; SC0008145; SC0012509
- OSTI ID:
- 1432153
- Journal Information:
- npj 2D Materials and Applications, Journal Name: npj 2D Materials and Applications Vol. 1; ISSN 2397-7132
- Publisher:
- Springer NatureCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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