Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure

Kim, Joon-Seok; Juneja, Rinkle; Salke, Nilesh P.; Palosz, Witold; Swaminathan, Venkataraman; Trivedi, Sudhir; Singh, Abhishek K.; Akinwande, Deji; Lin, Jung-Fu

doi:10.1063/1.5018857

Title: Structural, vibrational, and electronic topological transitions of Bi_1.5Sb_0.5Te_1.8Se_1.2 under pressure

Journal Article · Tue Mar 20 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5018857· OSTI ID:1431356

^[1]; Juneja, Rinkle ^[2]; Salke, Nilesh P. ^[3]; Palosz, Witold ^[4]; Swaminathan, Venkataraman ^[5]; Trivedi, Sudhir ^[4];

^[2]; Akinwande, Deji ^[1]; Lin, Jung-Fu ^[6]

Univ. of Texas, Austin, TX (United States)
Indian Inst. of Science, Bangalore (India)
Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
Brimrose Corp., Sparks, MD (United States)
U.S. Army RDECOM-ARDEC, Picatinny Arsenal, NJ (United States)
Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Univ. of Texas, Austin, TX (United States)

Topological insulators have been the subject of intense research interest due to their unique surface states that are topologically protected against scattering or defects. However, the relationship between the crystal structure and topological insulator state remains to be clarified. Here, we show the effects of hydrostatic pressure on the structural, vibrational, and topological properties of the topological insulator Bi_1.5Sb_0.5Te_1.8Se_1.2 up to 45 GPa using X-ray diffraction and Raman spectroscopy in a diamond anvil cell, together with first-principles theoretical calculations. Two pressure-induced structural phase transitions were observed: from ambient rhombohedral R3¡m phase to a monoclinic C2/m phase at ~13 GPa, and to a disordered I4/mmm phase at ~22 GPa. In addition, the alloy undergoes several electronic transitions within the R3¯m phase: indirect to direct bulk band gap transition at ~5.8 GPa, bulk gap closing with an appearance of Dirac semimetal (DSM) state at ~8.2 GPa, and to a trivial semimetal state at ~12.1 GPa. Anomalies in c/a ratio and Raman full width at half maximum that coincide with the DSM phase suggest the contribution of electron-phonon coupling to the transition. Here, compared to binary end members Bi₂Te₃, Bi₂Se₃, and Sb₂Te₃, the structural phase transition and anomaly were observed at higher pressures in Bi_1.5Sb_0.5Te_1.8Se_1.2. These results suggest that the topological transitions are precursors to the structural phase transitions.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: US Army Research Office (ARO)

Grant/Contract Number:: FA5209-16-P-0090; W911NF-13-1-0364

OSTI ID:: 1431356

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 11; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 8 works

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Title: Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure

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Title: Structural, vibrational, and electronic topological transitions of Bi_1.5Sb_0.5Te_1.8Se_1.2 under pressure