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Utilizing hot electrons

Journal Article · · Nature Energy
 [1]
  1. Univ. of Colorado, Boulder, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
In current solar cells, any photon energy exceeding the semiconductor bandgap is lost before being collected, limiting the cell performance. Hot carrier solar cells could avoid these losses. Now, a detailed experimental study and analysis shows that this strategy could lead to an improvement of the photoconversion efficiency in practice.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1430823
Report Number(s):
NREL/JA--5900-71220
Journal Information:
Nature Energy, Journal Name: Nature Energy Journal Issue: 3 Vol. 3; ISSN 2058-7546
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

References (10)

Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency: Wafer bonded four-junction concentrator solar cells with 44.7% efficiency journal January 2014
Irreversibilities in the mechanism of photoelectrolysis journal January 1978
Solid-state perspectives of the photoelectrochemistry of semiconductor–electrolyte junctions journal November 1984
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions journal August 2017
Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature journal March 2018
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells journal March 1961
Hot carrier injection at semiconductor-electrolyte junctions journal January 1980
Efficiency of hot‐carrier solar energy converters journal May 1982
Hot carrier injection of photogenerated electrons at indium phosphide–electrolyte interfaces journal November 1983
S PECTROSCOPY AND H OT E LECTRON R ELAXATION D YNAMICS IN S EMICONDUCTOR Q UANTUM W ELLS AND Q UANTUM D OTS journal October 2001

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