Ionic Liquid Gating Control of RKKY Interaction in FeCoB/Ru/FeCoB and (Pt/Co)2/Ru/(Co/Pt)2 Multilayers.

Yang, Qu; Wang, Lei; Zhou, Ziyao; Wang, Liqian; Zhang, Yijun; Zhao, Shishun; Dong, Guohua; Cheng, Yuxin; Min, Tai; Hu, Zhongqiang; Chen, Wei; Xia, Ke; Liu, Ming

doi:10.1038/s41467-018-03356-z

Ionic Liquid Gating Control of RKKY Interaction in FeCoB/Ru/FeCoB and (Pt/Co)₂/Ru/(Co/Pt)₂ Multilayers.

Journal Article · Wed Mar 07 00:00:00 EST 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-03356-z· OSTI ID:1430096

Yang, Qu ^[1]; Wang, Lei ^[2]; Zhou, Ziyao ^[1]; Wang, Liqian ^[1]; Zhang, Yijun ^[1]; Zhao, Shishun ^[1]; Dong, Guohua ^[1]; Cheng, Yuxin ^[1]; Min, Tai ^[3]; Hu, Zhongqiang ^[1]; Chen, Wei ^[4]; Xia, Ke ^[5]; Liu, Ming ^[1]

Xi’an Jiaotong Univ., Xi’an (China). Electronic Materials Research Lab., Key Lab. of the Ministry of Education & International Center for Dielectric Research
Xi’an Jiaotong Univ., Shaanxi (China). Center for Spintronics and Quantum System, State Key Lab. for Mechanical Behavior of Materials, School of Materials Science and Engineering
Xi’an Jiaotong Univ., Shaanxi (China). Center for Spintronics and Quantum System, State Key Lab. for Mechanical Behavior of Materials, School of Materials Science and Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
Beijing Normal Univ., Beijing (China). Center for Advanced Quantum Studies and Dept. of Physics; Hunan Normal Univ., Changsha (China). Synergetic Innovation Center for Quantum Effects and Applications (SICQEA)

To overcome the fundamental challenge of the weak natural response of antiferromagnetic materials under a magnetic field, voltage manipulation of antiferromagnetic interaction is developed to realize ultrafast, high-density, and power efficient antiferromagnetic spintronics. Here, we report a low voltage modulation of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction via ionic liquid gating in synthetic antiferromagnetic multilayers of FeCoB/Ru/FeCoB and (Pt/Co)₂/Ru/(Co/Pt)₂. At room temperature, the distinct voltage control of transition between antiferromagnetic and ferromagnetic ordering is realized and up to 80% of perpendicular magnetic moments manage to switch with a small-applied voltage bias of 2.5 V. We related this ionic liquid gating-induced RKKY interaction modification to the disturbance of itinerant electrons inside synthetic antiferromagnetic heterostructure and the corresponding change of its Fermi level. In conclusion, voltage tuning of RKKY interaction may enable the next generation of switchable spintronics between antiferromagnetic and ferromagnetic modes with both fundamental and practical perspectives.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: Fundamental Research Funds for the Central Universities; National Natural Science Foundation of China (NNSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1430096

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 9; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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