Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- SunPower Corporation
A test sequence producing potential-induced degradation-delamination (PID-d) in crystalline silicon modules has been tested and found comparable under visual inspection to cell/encapsulant delamination seen in some fielded modules. Four commercial modules were put through this sequence, 85 degrees C, 85%, 1000 h damp heat, followed by an intensive PID stress sequence of 72 degrees C, 95% RH, and -1000 V, with the module face grounded using a metal foil. The 60 cell c-Si modules exhibiting the highest current transfer (4.4 center dot 10-4 A) exhibited PID-d at the first inspection after 156 h of PID stress. Effects promoting PID-d are reduced adhesion caused by damp heat, sodium migration further reducing adhesion to the cells, and gaseous products of electrochemical reactions driven by the applied system voltage. A new work item proposal for an IEC test standard to evaluate for PID-d is anticipated.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1429979
- Report Number(s):
- NREL/CP-5J00-67256
- Resource Relation:
- Conference: Presented at the 2016 Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, 28-31 August 2016, Vail, Colorado
- Country of Publication:
- United States
- Language:
- English
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