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Title: Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint

Abstract

A test sequence producing potential-induced degradation-delamination (PID-d) in crystalline silicon modules has been tested and found comparable under visual inspection to cell/encapsulant delamination seen in some fielded modules. Four commercial modules were put through this sequence, 85 degrees C, 85%, 1000 h damp heat, followed by an intensive PID stress sequence of 72 degrees C, 95% RH, and -1000 V, with the module face grounded using a metal foil. The 60 cell c-Si modules exhibiting the highest current transfer (4.4 center dot 10-4 A) exhibited PID-d at the first inspection after 156 h of PID stress. Effects promoting PID-d are reduced adhesion caused by damp heat, sodium migration further reducing adhesion to the cells, and gaseous products of electrochemical reactions driven by the applied system voltage. A new work item proposal for an IEC test standard to evaluate for PID-d is anticipated.

Authors:
 [1];  [1];  [1];  [2];  [2]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. SunPower Corporation
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1429979
Report Number(s):
NREL/CP-5J00-67256
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2016 Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, 28-31 August 2016, Vail, Colorado
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; module testing; potential-induced degradation; delamination

Citation Formats

Hacke, Peter L, Kempe, Michael D, Wohlgemuth, John, Li, Jichao, and Shen, Yu-Chen. Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint. United States: N. p., 2018. Web.
Hacke, Peter L, Kempe, Michael D, Wohlgemuth, John, Li, Jichao, & Shen, Yu-Chen. Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint. United States.
Hacke, Peter L, Kempe, Michael D, Wohlgemuth, John, Li, Jichao, and Shen, Yu-Chen. Wed . "Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint". United States. https://www.osti.gov/servlets/purl/1429979.
@article{osti_1429979,
title = {Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint},
author = {Hacke, Peter L and Kempe, Michael D and Wohlgemuth, John and Li, Jichao and Shen, Yu-Chen},
abstractNote = {A test sequence producing potential-induced degradation-delamination (PID-d) in crystalline silicon modules has been tested and found comparable under visual inspection to cell/encapsulant delamination seen in some fielded modules. Four commercial modules were put through this sequence, 85 degrees C, 85%, 1000 h damp heat, followed by an intensive PID stress sequence of 72 degrees C, 95% RH, and -1000 V, with the module face grounded using a metal foil. The 60 cell c-Si modules exhibiting the highest current transfer (4.4 center dot 10-4 A) exhibited PID-d at the first inspection after 156 h of PID stress. Effects promoting PID-d are reduced adhesion caused by damp heat, sodium migration further reducing adhesion to the cells, and gaseous products of electrochemical reactions driven by the applied system voltage. A new work item proposal for an IEC test standard to evaluate for PID-d is anticipated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Conference:
Other availability
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