Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint

Conference · Wed Mar 21 00:00:00 EDT 2018

OSTI ID:1429979

Hacke, Peter L ^[1]; Kempe, Michael D ^[1]; Wohlgemuth, John ^[1]; Li, Jichao ^[2]; Shen, Yu-Chen ^[2]

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1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
2. SunPower Corporation

A test sequence producing potential-induced degradation-delamination (PID-d) in crystalline silicon modules has been tested and found comparable under visual inspection to cell/encapsulant delamination seen in some fielded modules. Four commercial modules were put through this sequence, 85 degrees C, 85%, 1000 h damp heat, followed by an intensive PID stress sequence of 72 degrees C, 95% RH, and -1000 V, with the module face grounded using a metal foil. The 60 cell c-Si modules exhibiting the highest current transfer (4.4 center dot 10-4 A) exhibited PID-d at the first inspection after 156 h of PID stress. Effects promoting PID-d are reduced adhesion caused by damp heat, sodium migration further reducing adhesion to the cells, and gaseous products of electrochemical reactions driven by the applied system voltage. A new work item proposal for an IEC test standard to evaluate for PID-d is anticipated.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1429979
• Report Number(s): NREL/CP-5J00-67256
• Conference Information: Presented at the 2016 Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, 28-31 August 2016, Vail, Colorado
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
delamination
module testing
potential-induced degradation