Bright nanowire single photon source based on SiV centers in diamond

Marseglia, L.; Saha, K.; Ajoy, A.; Schröder, T.; Englund, D.; Jelezko, F.; Walsworth, R.; Pacheco, J. L.; Perry, D. L.; Bielejec, E. S.; Cappellaro, P.

doi:10.1364/OE.26.000080

Title: Bright nanowire single photon source based on SiV centers in diamond

Journal Article · Tue Jan 02 00:00:00 EST 2018 · Optics Express

DOI:https://doi.org/10.1364/OE.26.000080· OSTI ID:1415337

Marseglia, L.; Saha, K.; Ajoy, A.; Schröder, T.; Englund, D.; Jelezko, F.; Walsworth, R.; Pacheco, J. L.; Perry, D. L.; Bielejec, E. S.;

The practical implementation of quantum technologies such as quantum commu- nication and quantum cryptography relies on the development of indistinguishable, robust, and bright single photon sources that works at room temperature. The silicon- vacancy (SiV^-) center in diamond has emerged as a possible candidate for a single photon source with all these characteristics. Unfortunately, due to the high refraction index mismatch between diamond and air, color centers in diamond show low photon out-coupling. This drawback can be overcome by fabrication of photonic structures that improve the in-coupling of excitation laser to the diamond defect as well as the out-coupling emission from the color centers. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion effciency to single SiV^-, targeted to fabricated nanowires. The co-localization of single SiV^- defects with the nanostructures yields a ten times higher light coupling effciency as compared to single SiV^- in the bulk. This result, with its intrinsic scalability, enables a new class of devices for integrated photonics and quantum information processing.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1415337

Alternate ID(s):: OSTI ID: 1429740

Report Number(s):: SAND-2017-1943J; OPEXFF

Journal Information:: Optics Express, Journal Name: Optics Express Vol. 26 Journal Issue: 1; ISSN 1094-4087

Publisher:: Optical Society of AmericaCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 29 works

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Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation Eaton, Shane M.; Hadden, John P.; Bharadwaj, Vibhav Advanced Quantum Technologies, Vol. 2, Issue 5-6 https://doi.org/10.1002/qute.201900006	journal	April 2019
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