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Title: A bond-order potential for the Al–Cu–H ternary system

Journal Article · · New Journal of Chemistry
DOI:https://doi.org/10.1039/c8nj00513c· OSTI ID:1429693

Al-Based Al–Cu alloys have a very high strength to density ratio, and are therefore important materials for transportation systems including vehicles and aircrafts. These alloys also appear to have a high resistance to hydrogen embrittlement, and as a result, are being explored for hydrogen related applications. To enable fundamental studies of mechanical behavior of Al–Cu alloys under hydrogen environments, we have developed an Al–Cu–H bond-order potential according to the formalism implemented in the molecular dynamics code LAMMPS. Our potential not only fits well to properties of a variety of elemental and compound configurations (with coordination varying from 1 to 12) including small clusters, bulk lattices, defects, and surfaces, but also passes stringent molecular dynamics simulation tests that sample chaotic configurations. Careful studies verified that this Al–Cu–H potential predicts structural property trends close to experimental results and quantum-mechanical calculations; in addition, it properly captures Al–Cu, Al–H, and Cu–H phase diagrams and enables simulations of H2 dissociation, chemisorption, and absorption on Al–Cu surfaces.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1429693
Report Number(s):
SAND-2017-12659J; NJCHE5; 658934; TRN: US1802480
Journal Information:
New Journal of Chemistry, Vol. 42, Issue 7; ISSN 1144-0546
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science

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Cited By (2)

An Analytical Bond Order Potential for Mg−H Systems journal January 2019
Impact of Molecular Dynamics Simulations on Research and Development of Semiconductor Materials journal January 2019

Figures / Tables (14)


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