Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

Black, Jennifer M.; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T.; Noh, Joo Hyon; Pudasaini, Pushpa R.; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V.; Rack, Philip D.; Ward, Thomas Zac; Feng, Guang; Balke, Nina

doi:10.1021/acsami.7b11044

Title: Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

Journal Article · Tue Oct 24 00:00:00 EDT 2017 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.7b11044· OSTI ID:1429223

Black, Jennifer M. ^[1];

^[1]; Bi, Sheng ^[2]; Zhu, Mengyang ^[2]; Zhao, Wei ^[2]; Wong, Anthony T. ^[3]; Noh, Joo Hyon ^[3]; Pudasaini, Pushpa R. ^[3];

^[4]; Okatan, Mahmut Baris ^[1];

^[5];

^[1];

^[6];

^[7]; Feng, Guang ^[2];

^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
Huazhong Univ. of Science and Technology (HUST), Wuhan (China). State Key Laboratory of Coal Combustion, School of Energy and Power Engineering
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Chemistry
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: AC05-00OR22725; 1544686; SC0002136

OSTI ID:: 1429223

Journal Information:: ACS Applied Materials and Interfaces, Vol. 9, Issue 46; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 19 works

Citation information provided by
Web of Science

References (60)

Mott Memory and Neuromorphic Devices Proceedings of the IEEE, Vol. 103, Issue 8 https://doi.org/10.1109/JPROC.2015.2431914	journal	August 2015
A scalable neuristor built with Mott memristors Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley Nature Materials, Vol. 12, Issue 2 https://doi.org/10.1038/nmat3510	journal	December 2012
Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams Cao, J.; Ertekin, E.; Srinivasan, V. Nature Nanotechnology, Vol. 4, Issue 11 https://doi.org/10.1038/nnano.2009.266	journal	September 2009
Reversible electric control of exchange bias in a multiferroic field-effect device Wu, S. M.; Cybart, Shane A.; Yu, P. Nature Materials, Vol. 9, Issue 9 https://doi.org/10.1038/nmat2803	journal	July 2010
Metal-insulator transitions in VO ₂ , Ti ₂ O ₃ and Ti _{2- x} V _x O ₃ Mott, N. F.; Friedman, L. Philosophical Magazine, Vol. 30, Issue 2 https://doi.org/10.1080/14786439808206565	journal	August 1974
Metal-insulator transitions Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263 https://doi.org/10.1103/RevModPhys.70.1039	journal	October 1998
Control of octahedral connectivity in perovskite oxide heterostructures: An emerging route to multifunctional materials discovery Rondinelli, James M.; May, Steven J.; Freeland, John W. MRS Bulletin, Vol. 37, Issue 3 https://doi.org/10.1557/mrs.2012.49	journal	March 2012
Orbital Physics in Transition-Metal Oxides Tokura, Y. Science, Vol. 288, Issue 5465 https://doi.org/10.1126/science.288.5465.462	journal	April 2000
Emergent phenomena at oxide interfaces Hwang, H. Y.; Iwasa, Y.; Kawasaki, M. Nature Materials, Vol. 11, Issue 2 https://doi.org/10.1038/nmat3223	journal	January 2012
High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids Yuan, Hongtao; Shimotani, Hidekazu; Tsukazaki, Atsushi Advanced Functional Materials, Vol. 19, Issue 7 https://doi.org/10.1002/adfm.200801633	journal	April 2009
Liquid-gated interface superconductivity on an atomically flat film Ye, J. T.; Inoue, S.; Kobayashi, K. Nature Materials, Vol. 9, Issue 2 https://doi.org/10.1038/nmat2587	journal	November 2009
Electrostatic modification of novel materials Ahn, C. H.; Bhattacharya, A.; Di Ventra, M. Reviews of Modern Physics, Vol. 78, Issue 4, p. 1185-1212 https://doi.org/10.1103/RevModPhys.78.1185	journal	November 2006
Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic Cho, Jeong Ho; Lee, Jiyoul; Xia, Yu Nature Materials, Vol. 7, Issue 11, p. 900-906 https://doi.org/10.1038/nmat2291	journal	October 2008
Electrolyte-Gated Transistors for Organic and Printed Electronics Kim, Se Hyun; Hong, Kihyon; Xie, Wei Advanced Materials, Vol. 25, Issue 13 https://doi.org/10.1002/adma.201202790	journal	December 2012
Electrostatic Control of the Evolution from a Superconducting Phase to an Insulating Phase in Ultrathin ${YBa}_{2} {Cu}_{3} O_{7 - x}$ Films Leng, Xiang; Garcia-Barriocanal, Javier; Bose, Shameek Physical Review Letters, Vol. 107, Issue 2 https://doi.org/10.1103/PhysRevLett.107.027001	journal	July 2011
Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide Yamada, Y.; Ueno, K.; Fukumura, T. Science, Vol. 332, Issue 6033 https://doi.org/10.1126/science.1202152	journal	May 2011
Transistor Effects and In Situ STM of Redox Molecules at Room Temperature Albrecht, T.; Guckian, A.; Ulstrup, J. IEEE Transactions On Nanotechnology, Vol. 4, Issue 4 https://doi.org/10.1109/TNANO.2005.851280	journal	July 2005
Transistor-like Behavior of Transition Metal Complexes Albrecht, Tim; Guckian, Adrian; Ulstrup, Jens Nano Letters, Vol. 5, Issue 7 https://doi.org/10.1021/nl050818o	journal	June 2005
Scanning Tunneling Spectroscopy in an Ionic Liquid Albrecht, Tim; Moth-Poulsen, Kasper; Christensen, Jørn B. Journal of the American Chemical Society, Vol. 128, Issue 20 https://doi.org/10.1021/ja061993p	journal	May 2006
Principles of a Single-Molecule Rectifier in Electrolytic Environment Cheung, K. C. Matthew; Chen, Xiaoyu; Albrecht, Tim The Journal of Physical Chemistry C, Vol. 120, Issue 6 https://doi.org/10.1021/acs.jpcc.5b10320	journal	February 2016
Single-Molecule Electron Transfer in Electrochemical Environments Zhang, Jingdong; Kuznetsov, Alexander M.; Medvedev, Igor G. Chemical Reviews, Vol. 108, Issue 7 https://doi.org/10.1021/cr068073+	journal	July 2008
Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T. Advanced Functional Materials, Vol. 26, Issue 17 https://doi.org/10.1002/adfm.201505274	journal	February 2016
Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics Park, Sungjun; Lee, SeYeong; Kim, Chang-Hyun Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep13088	journal	August 2015
Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors Yuan, Hongtao; Shimotani, Hidekazu; Ye, Jianting Journal of the American Chemical Society, Vol. 132, Issue 51 https://doi.org/10.1021/ja108912x	journal	December 2010
Electric-double-layer field-effect transistors with ionic liquids Fujimoto, Takuya; Awaga, Kunio Physical Chemistry Chemical Physics, Vol. 15, Issue 23 https://doi.org/10.1039/c3cp50755f	journal	January 2013
Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors Noh, Joo Hyon; Joshi, Pooran C.; Kuruganti, Teja IEEE Journal of the Electron Devices Society, Vol. 3, Issue 3 https://doi.org/10.1109/JEDS.2014.2376411	journal	May 2015
Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties Kwon, Seyeoul; Noh, Joo Hyon; Noh, Jiyong Journal of The Electrochemical Society, Vol. 158, Issue 3 https://doi.org/10.1149/1.3530779	journal	January 2011
The interface ionic liquid(s)/electrode(s): In situSTM and AFM measurements Endres, Frank; Borisenko, Natalia; El Abedin, Sherif Zein Faraday Discuss., Vol. 154 https://doi.org/10.1039/C1FD00050K	journal	January 2012
An in situ STM/AFM and impedance spectroscopy study of the extremely pure 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate/Au(111) interface: potential dependent solvation layers and the herringbone reconstruction Atkin, Rob; Borisenko, Natalia; Drüschler, Marcel Physical Chemistry Chemical Physics, Vol. 13, Issue 15 https://doi.org/10.1039/c0cp02846k	journal	January 2011
Probing double layer structures of Au (111)–BMIPF ₆ ionic liquid interfaces from potential-dependent AFM force curves Zhang, Xiao; Zhong, Yun-Xin; Yan, Jia-Wei Chem. Commun., Vol. 48, Issue 4 https://doi.org/10.1039/C1CC15463J	journal	January 2012
Topological defects in electric double layers of ionic liquids at carbon interfaces Black, Jennifer M.; Baris Okatan, M.; Feng, Guang Nano Energy, Vol. 15 https://doi.org/10.1016/j.nanoen.2015.05.037	journal	July 2015
Molecular Layering of Fluorinated Ionic Liquids at a Charged Sapphire (0001) Surface Mezger, M.; Schroder, H.; Reichert, H. Science, Vol. 322, Issue 5900 https://doi.org/10.1126/science.1164502	journal	October 2008
Structural Origins of Potential Dependent Hysteresis at the Electrified Graphene/Ionic Liquid Interface Uysal, Ahmet; Zhou, Hua; Feng, Guang The Journal of Physical Chemistry C, Vol. 118, Issue 1 https://doi.org/10.1021/jp4111025	journal	December 2013
Ionic Liquids at Electrified Interfaces Fedorov, Maxim V.; Kornyshev, Alexei A. Chemical Reviews, Vol. 114, Issue 5 https://doi.org/10.1021/cr400374x	journal	March 2014
Structure and Nanostructure in Ionic Liquids Hayes, Robert; Warr, Gregory G.; Atkin, Rob Chemical Reviews, Vol. 115, Issue 13 https://doi.org/10.1021/cr500411q	journal	June 2015
Nanostructure of the Ionic Liquid–Graphite Stern Layer Elbourne, Aaron; McDonald, Samila; Voïchovsky, Kislon ACS Nano, Vol. 9, Issue 7 https://doi.org/10.1021/acsnano.5b02921	journal	June 2015
Double Layer Structure of Ionic Liquids at the Au(111) Electrode Interface: An Atomic Force Microscopy Investigation Hayes, Robert; Borisenko, Natalia; Tam, Matthew K. The Journal of Physical Chemistry C, Vol. 115, Issue 14, p. 6855-6863 https://doi.org/10.1021/jp200544b	journal	March 2011
Double Layer in Ionic Liquids: Overscreening versus Crowding Bazant, Martin Z.; Storey, Brian D.; Kornyshev, Alexei A. Physical Review Letters, Vol. 106, Issue 4 https://doi.org/10.1103/PhysRevLett.106.046102	journal	January 2011
Electrode screening by ionic liquids Lynden-Bell, R. M.; Frolov, A. I.; Fedorov, M. V. Physical Chemistry Chemical Physics, Vol. 14, Issue 8 https://doi.org/10.1039/c2cp23267g	journal	January 2012
Surface Structure at the Ionic Liquid−Electrified Metal Interface Baldelli, Steven Accounts of Chemical Research, Vol. 41, Issue 3 https://doi.org/10.1021/ar700185h	journal	March 2008
Bias-Dependent Molecular-Level Structure of Electrical Double Layer in Ionic Liquid on Graphite Black, Jennifer M.; Walters, Deron; Labuda, Aleksander Nano Letters, Vol. 13, Issue 12, p. 5954-5960 https://doi.org/10.1021/nl4031083	journal	November 2013
Interfacial ionic ‘liquids’: connecting static and dynamic structures Uysal, Ahmet; Zhou, Hua; Feng, Guang Journal of Physics: Condensed Matter, Vol. 27, Issue 3 https://doi.org/10.1088/0953-8984/27/3/032101	journal	December 2014
Voltage-Controlled Interfacial Layering in an Ionic Liquid on SrTiO ₃ Petach, Trevor A.; Mehta, Apurva; Marks, Ronald ACS Nano, Vol. 10, Issue 4 https://doi.org/10.1021/acsnano.6b00645	journal	March 2016
Phase Transitions, Decomposition Temperatures, Viscosities, and Densities of Phosphonium, Ammonium, and Imidazolium Ionic Liquids with Aprotic Heterocyclic Anions Fillion, Joseph J.; Xia, Han; Desilva, M. Aruni Journal of Chemical & Engineering Data, Vol. 61, Issue 8 https://doi.org/10.1021/acs.jced.6b00269	journal	July 2016
Self-assembly in the electrical double layer of ionic liquids Perkin, Susan; Crowhurst, Lorna; Niedermeyer, Heiko Chemical Communications, Vol. 47, Issue 23 https://doi.org/10.1039/c1cc11322d	journal	January 2011
Fundamental aspects of electric double layer force-distance measurements at liquid-solid interfaces using atomic force microscopy Black, Jennifer M.; Zhu, Mengyang; Zhang, Pengfei Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep32389	journal	September 2016
Influence of the aliphatic chain length of imidazolium based ionic liquids on the surface structure Hammer, Tobias; Reichelt, Manuela; Morgner, Harald Physical Chemistry Chemical Physics, Vol. 12, Issue 36 https://doi.org/10.1039/c004415f	journal	January 2010
Structure and dynamics of the interfacial layer between ionic liquids and electrode materials Atkin, Rob; Borisenko, Natalia; Drüschler, Marcel Journal of Molecular Liquids, Vol. 192 https://doi.org/10.1016/j.molliq.2013.08.006	journal	April 2014
Double layer in ionic liquids: The nature of the camel shape of capacitance Fedorov, M. V.; Georgi, N.; Kornyshev, A. A. Electrochemistry Communications, Vol. 12, Issue 2 https://doi.org/10.1016/j.elecom.2009.12.019	journal	February 2010
Ionic Liquid versus SiO ₂ Gated a-IGZO Thin Film Transistors: A Direct Comparison Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony ECS Journal of Solid State Science and Technology, Vol. 4, Issue 9 https://doi.org/10.1149/2.0141509jss	journal	January 2015
Role of Percolation in the Conductance of Electrolyte-Gated ${SrTiO}_{3}$ Li, Mingyang; Graf, Tanja; Schladt, Thomas D. Physical Review Letters, Vol. 109, Issue 19 https://doi.org/10.1103/PhysRevLett.109.196803	journal	November 2012
Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations Nomura, Kenji; Kamiya, Toshio; Ohta, Hiromichi Physical Review B, Vol. 75, Issue 3 https://doi.org/10.1103/PhysRevB.75.035212	journal	January 2007
Origin of subgap states in amorphous In-Ga-Zn-O Körner, Wolfgang; Urban, Daniel F.; Elsässer, Christian Journal of Applied Physics, Vol. 114, Issue 16 https://doi.org/10.1063/1.4826895	journal	October 2013
Self-consistent molecular dynamics formulation for electric-field-mediated electrolyte transport through nanochannels Raghunathan, A. V.; Aluru, N. R. Physical Review E, Vol. 76, Issue 1 https://doi.org/10.1103/PhysRevE.76.011202	journal	July 2007
Complex Capacitance Scaling in Ionic Liquids-Filled Nanopores Wu, Peng; Huang, Jingsong; Meunier, Vincent ACS Nano, Vol. 5, Issue 11 https://doi.org/10.1021/nn203260w	journal	October 2011
Accelerating charging dynamics in subnanometre pores Kondrat, Svyatoslav; Wu, Peng; Qiao, Rui Nature Materials, Vol. 13, Issue 4 https://doi.org/10.1038/nmat3916	journal	March 2014
Molecular Force Field for Ionic Liquids Composed of Triflate or Bistriflylimide Anions Canongia Lopes, José N.; Pádua, Agílio A. H. The Journal of Physical Chemistry B, Vol. 108, Issue 43 https://doi.org/10.1021/jp0476545	journal	October 2004
UFF, a full periodic table force field for molecular mechanics and molecular dynamics simulations Rappe, A. K.; Casewit, C. J.; Colwell, K. S. Journal of the American Chemical Society, Vol. 114, Issue 25, p. 10024-10035 https://doi.org/10.1021/ja00051a040	journal	December 1992
Investigating the Specificity of Peptide Adsorption on Gold Using Molecular Dynamics Simulations Verde, Ana Vila; Acres, Jacqueline M.; Maranas, Janna K. Biomacromolecules, Vol. 10, Issue 8 https://doi.org/10.1021/bm9002464	journal	July 2009
GROMACS 3.0: a package for molecular simulation and trajectory analysis Lindahl, Erik; Hess, Berk; van der Spoel, David Journal of Molecular Modeling, Vol. 7, Issue 8 https://doi.org/10.1007/s008940100045	journal	August 2001

Cited By (2)

Programmable Electrofluidics for Ionic Liquid Based Neuromorphic Platform Boldman, Walker L.; Zhang, Cheng; Ward, Thomas Z. Micromachines, Vol. 10, Issue 7 https://doi.org/10.3390/mi10070478	journal	July 2019
Nanostructured tungsten oxide thin film devices: from optoelectronics and ionics to iontronics Hai, Zhenyin; Wei, Zihan; Xue, Chenyang Journal of Materials Chemistry C, Vol. 7, Issue 42 https://doi.org/10.1039/c9tc04489b	journal	January 2019

Similar Records

Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale

Journal Article · Tue Nov 13 00:00:00 EST 2018 · ACS Applied Materials and Interfaces · OSTI ID:1429223

Zhao, Wei; Bi, Sheng; Wisinger, Nina Balke; +5 more

Programmable Electrofluidics for Ionic Liquid Based Neuromorphic Platform

Journal Article · Mon Jul 01 00:00:00 EDT 2019 · Micromachines · OSTI ID:1429223

Boldman, Walker L.; Zhang, Cheng; Ward, Thomas Z.; +4 more

Ionic liquid versus SiO₂ gated a-IGZO thin film transistors: A direct comparison

Journal Article · Wed Aug 12 00:00:00 EDT 2015 · ECS Journal of Solid State Science and Technology · OSTI ID:1429223

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; +5 more

Related Subjects

36 MATERIALS SCIENCE
electric double layer
ionic liquid
liquid gating
scanning probe microscopy
transistor

Title: Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

Citation Formats

References (60)

Cited By (2)

Similar Records

Related Subjects