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Title: Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

Abstract

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working ofmore » a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.« less

Authors:
 [1]; ORCiD logo [1];  [2];  [2];  [2];  [3];  [3];  [3]; ORCiD logo [4];  [1]; ORCiD logo [5]; ORCiD logo [1]; ORCiD logo [6]; ORCiD logo [7];  [2]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
  2. Huazhong Univ. of Science and Technology (HUST), Wuhan (China). State Key Laboratory of Coal Combustion, School of Energy and Power Engineering
  3. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Chemistry
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  7. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1429223
Grant/Contract Number:
AC05-00OR22725; 1544686; SC0002136
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 46; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electric double layer; ionic liquid; liquid gating; scanning probe microscopy; transistor

Citation Formats

Black, Jennifer M., Come, Jeremy, Bi, Sheng, Zhu, Mengyang, Zhao, Wei, Wong, Anthony T., Noh, Joo Hyon, Pudasaini, Pushpa R., Zhang, Pengfei, Okatan, Mahmut Baris, Dai, Sheng, Kalinin, Sergei V., Rack, Philip D., Ward, Thomas Zac, Feng, Guang, and Balke, Nina. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices. United States: N. p., 2017. Web. doi:10.1021/acsami.7b11044.
Black, Jennifer M., Come, Jeremy, Bi, Sheng, Zhu, Mengyang, Zhao, Wei, Wong, Anthony T., Noh, Joo Hyon, Pudasaini, Pushpa R., Zhang, Pengfei, Okatan, Mahmut Baris, Dai, Sheng, Kalinin, Sergei V., Rack, Philip D., Ward, Thomas Zac, Feng, Guang, & Balke, Nina. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices. United States. doi:10.1021/acsami.7b11044.
Black, Jennifer M., Come, Jeremy, Bi, Sheng, Zhu, Mengyang, Zhao, Wei, Wong, Anthony T., Noh, Joo Hyon, Pudasaini, Pushpa R., Zhang, Pengfei, Okatan, Mahmut Baris, Dai, Sheng, Kalinin, Sergei V., Rack, Philip D., Ward, Thomas Zac, Feng, Guang, and Balke, Nina. Tue . "Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices". United States. doi:10.1021/acsami.7b11044.
@article{osti_1429223,
title = {Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices},
author = {Black, Jennifer M. and Come, Jeremy and Bi, Sheng and Zhu, Mengyang and Zhao, Wei and Wong, Anthony T. and Noh, Joo Hyon and Pudasaini, Pushpa R. and Zhang, Pengfei and Okatan, Mahmut Baris and Dai, Sheng and Kalinin, Sergei V. and Rack, Philip D. and Ward, Thomas Zac and Feng, Guang and Balke, Nina},
abstractNote = {Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.},
doi = {10.1021/acsami.7b11044},
journal = {ACS Applied Materials and Interfaces},
number = 46,
volume = 9,
place = {United States},
year = {Tue Oct 24 00:00:00 EDT 2017},
month = {Tue Oct 24 00:00:00 EDT 2017}
}

Journal Article:
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