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Title: Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

Abstract

A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

Authors:
 [1];  [2];  [2];  [2];  [3];  [4];  [5];  [2];  [3];  [6];  [1];  [2]
  1. Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy
  2. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA
  3. Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA
  4. Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA
  5. Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA
  6. Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1427539
DOE Contract Number:
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Advanced Functional Materials; Journal Volume: 27; Journal Issue: 25
Country of Publication:
United States
Language:
English

Citation Formats

Tiriolo, Raffaele, Rangnekar, Neel, Zhang, Han, Shete, Meera, Bai, Peng, Nelson, John, Karapetrova, Evguenia, Macosko, Christopher W., Siepmann, Joern Ilja, Lamanna, Ernesto, Lavano, Angelo, and Tsapatsis, Michael. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus. United States: N. p., 2017. Web. doi:10.1002/adfm.201700864.
Tiriolo, Raffaele, Rangnekar, Neel, Zhang, Han, Shete, Meera, Bai, Peng, Nelson, John, Karapetrova, Evguenia, Macosko, Christopher W., Siepmann, Joern Ilja, Lamanna, Ernesto, Lavano, Angelo, & Tsapatsis, Michael. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus. United States. doi:10.1002/adfm.201700864.
Tiriolo, Raffaele, Rangnekar, Neel, Zhang, Han, Shete, Meera, Bai, Peng, Nelson, John, Karapetrova, Evguenia, Macosko, Christopher W., Siepmann, Joern Ilja, Lamanna, Ernesto, Lavano, Angelo, and Tsapatsis, Michael. Mon . "Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus". United States. doi:10.1002/adfm.201700864.
@article{osti_1427539,
title = {Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus},
author = {Tiriolo, Raffaele and Rangnekar, Neel and Zhang, Han and Shete, Meera and Bai, Peng and Nelson, John and Karapetrova, Evguenia and Macosko, Christopher W. and Siepmann, Joern Ilja and Lamanna, Ernesto and Lavano, Angelo and Tsapatsis, Michael},
abstractNote = {A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.},
doi = {10.1002/adfm.201700864},
journal = {Advanced Functional Materials},
number = 25,
volume = 27,
place = {United States},
year = {Mon May 08 00:00:00 EDT 2017},
month = {Mon May 08 00:00:00 EDT 2017}
}
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