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Title: Controlled Current Distribution in Anti-Hall bar Geometries

Abstract

Quantum Hall measurements have been performed on high-mobility GaAs/AlGaAs (p-type) and (n-type) quantum wells using a Hall/Anti-Hall bar configuration having both inner and outer edges. The potential distribution and the current flow in the bulk can be controlled by the external magnetic field or the driving current. Extreme situations occur at the Quantum Hall states where the current, driven by leads connected to the outer edge, flows exclusively in one half of the sample. In these states, the chemical potential of the inner edge aligns itself with the edge at ground potential. Accumulation and depletion of carriers takes place at the edge whose carriers flow away from the current source.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [3]
  1. Wayne State Univ., Detroit, MI (United States)
  2. Princeton Univ., NJ (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1427270
Report Number(s):
SAND-2015-9126J
Journal ID: ISSN 9999-0014; 608006
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Sandia journal manuscript; Not yet accepted for publication
Additional Journal Information:
Journal Name: Sandia journal manuscript; Not yet accepted for publication; Journal ID: ISSN 9999-0014
Publisher:
Sandia
Country of Publication:
United States
Language:
English

Citation Formats

Tarquini, Vinicio, Knighton, Talbot, Wu, Zhe, Huang, Jian, Pfeiffer, Loren, West, Ken, and Reno, John L. Controlled Current Distribution in Anti-Hall bar Geometries. United States: N. p., 2015. Web.
Tarquini, Vinicio, Knighton, Talbot, Wu, Zhe, Huang, Jian, Pfeiffer, Loren, West, Ken, & Reno, John L. Controlled Current Distribution in Anti-Hall bar Geometries. United States.
Tarquini, Vinicio, Knighton, Talbot, Wu, Zhe, Huang, Jian, Pfeiffer, Loren, West, Ken, and Reno, John L. Thu . "Controlled Current Distribution in Anti-Hall bar Geometries". United States. https://www.osti.gov/servlets/purl/1427270.
@article{osti_1427270,
title = {Controlled Current Distribution in Anti-Hall bar Geometries},
author = {Tarquini, Vinicio and Knighton, Talbot and Wu, Zhe and Huang, Jian and Pfeiffer, Loren and West, Ken and Reno, John L.},
abstractNote = {Quantum Hall measurements have been performed on high-mobility GaAs/AlGaAs (p-type) and (n-type) quantum wells using a Hall/Anti-Hall bar configuration having both inner and outer edges. The potential distribution and the current flow in the bulk can be controlled by the external magnetic field or the driving current. Extreme situations occur at the Quantum Hall states where the current, driven by leads connected to the outer edge, flows exclusively in one half of the sample. In these states, the chemical potential of the inner edge aligns itself with the edge at ground potential. Accumulation and depletion of carriers takes place at the edge whose carriers flow away from the current source.},
doi = {},
journal = {Sandia journal manuscript; Not yet accepted for publication},
issn = {9999-0014},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}