Controlled Current Distribution in Anti-Hall bar Geometries

Journal Article · Thu Oct 01 00:00:00 EDT 2015 · Sandia journal manuscript; Not yet accepted for publication

OSTI ID:1427270

Tarquini, Vinicio ^[1]; Knighton, Talbot ^[1]; Wu, Zhe ^[1]; Huang, Jian ^[1]; Pfeiffer, Loren ^[2]; West, Ken ^[2]; Reno, John L. ^[3]

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1. Wayne State Univ., Detroit, MI (United States)
2. Princeton Univ., NJ (United States)
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Quantum Hall measurements have been performed on high-mobility GaAs/AlGaAs (p-type) and (n-type) quantum wells using a Hall/Anti-Hall bar configuration having both inner and outer edges. The potential distribution and the current flow in the bulk can be controlled by the external magnetic field or the driving current. Extreme situations occur at the Quantum Hall states where the current, driven by leads connected to the outer edge, flows exclusively in one half of the sample. In these states, the chemical potential of the inner edge aligns itself with the edge at ground potential. Accumulation and depletion of carriers takes place at the edge whose carriers flow away from the current source.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1427270
• Report Number(s): SAND-2015-9126J; 608006
• Journal Information: Sandia journal manuscript; Not yet accepted for publication, Journal Name: Sandia journal manuscript; Not yet accepted for publication; ISSN 9999-0014
• Publisher: Sandia
• Country of Publication: United States
• Language: English