Magnetic Diode Behavior at Room Temperature in 2D Honeycombs

Journal Article · Tue Mar 13 00:00:00 EDT 2018 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201700500· OSTI ID:1426308

Summers, Brock ^[1]; Dahal, Ashutosh ^[1]; Singh, Deepak K. ^[1]

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1. Department of Physics and Astronomy University of Missouri Columbia MO 65211 USA

Abstract The magnetic analog of a semiconductor diode, demonstrating unidirectional electrical transport, is a highly desirable functionality for spintronics application, as it can play a dual role as magnetic memory device and logic element. However, creating such a functional material or device with operation ability at room temperature in the absence of any external tuning parameter, for instance a magnetic field, is a challenge till date. In this study, the finding of semiconductor diode‐type rectification in a 2D honeycomb lattice, made of an ultrasmall permalloy magnet with a typical length of ≈12 nm is reported. The unidirectional electrical transport behavior, characterized by the asymmetric colossal enhancement in differential conductivity at a modest current application of ≈10–15 µA, persists to T = 300 K in honeycomb lattice of a moderate thickness of ≈6 nm. Importantly, the unidirectional biasing arises without the application of a magnetic field with an output power, ≈30 nW, by three orders of magnitude smaller than a semiconductor junction diode. Together, these properties provide a new vista for spintronics research.

• Sponsoring Organization: USDOE
• OSTI ID: 1426308
• Journal Information: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Vol. 4 Journal Issue: 5; ISSN 2199-160X
• Publisher: Wiley Blackwell (John Wiley & Sons)
• Country of Publication: United States
• Language: English