Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Dowling, Karen M.; Wang, Yongqiang; Senesky, Debbie G.

doi:10.1063/1.5005797

Title: Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

Journal Article · Mon Dec 11 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5005797· OSTI ID:1425766

Miller, Ruth A. ^[1]; So, Hongyun ^[2]; Chiamori, Heather C. ^[1]; Dowling, Karen M. ^[1]; Wang, Yongqiang ^[3]; Senesky, Debbie G. ^[1]

Stanford Univ., CA (United States)
Hanyang Univ., Seoul (Korea, Republic of)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

The electrical characteristics of gallium nitride (GaN) ultraviolet (UV) photodetectors with graphene and semitransparent Ni/Au electrodes subjected to 2 MeV proton irradiation are reported and compared. Graphene is shown to have a very high transmittance (87%) in the UV regime (365 nm) compared to semitransparent Ni/Au (3 nm / 10 nm) films (32%). Correspondingly, microfabricated graphene/GaN photodetectors showed a much higher pre-irradiation responsivity of 3388 A/W while that of semitransparent Ni/Au/GaN photodetectors was 351 A/W. For both types of electrodes, intermittent current-voltage measurements made during 2 MeV proton irradiation showed minimal variation up to a fluence of approximately 3.8 × 10¹³ cm^-2. Additionally, Raman spectroscopy of 200 keV proton beam, 3.8 × 10¹³ cm^-2 irradiated graphene showed minimal disorder with only a 6% increase in ID/IG compared to pre-irradiated graphene. These results support the use of graphene-enhanced GaN UV photodetectors in radiation-rich environments such as deep space.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22); USDOE

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1425766

Alternate ID(s):: OSTI ID: 1412615

Report Number(s):: LA-UR-17-30470; TRN: US1802160

Journal Information:: Applied Physics Letters, Vol. 111, Issue 24; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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References (29)

Structural Defects in Graphene Banhart, Florian; Kotakoski, Jani; Krasheninnikov, Arkady V. ACS Nano, Vol. 5, Issue 1 https://doi.org/10.1021/nn102598m	journal	November 2010
Wide-bandgap semiconductor ultraviolet photodetectors Monroy, E.; Omn s., F.; Calle, F. Semiconductor Science and Technology, Vol. 18, Issue 4 https://doi.org/10.1088/0268-1242/18/4/201	journal	March 2003
2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements Khanna, S. M.; Webb, J.; Tang, H. IEEE Transactions on Nuclear Science, Vol. 47, Issue 6 https://doi.org/10.1109/23.903772	journal	January 2000
Radiation effects on two-dimensional materials: Radiation effects on two-dimensional materials Walker, R. C.; Shi, T.; Silva, E. C. physica status solidi (a), Vol. 213, Issue 12 https://doi.org/10.1002/pssa.201600395	journal	September 2016
Making graphene visible Blake, P.; Hill, E. W.; Castro Neto, A. H. Applied Physics Letters, Vol. 91, Issue 6 https://doi.org/10.1063/1.2768624	journal	August 2007
Gain mechanism in GaN Schottky ultraviolet detectors Katz, O.; Garber, V.; Meyler, B. Applied Physics Letters, Vol. 79, Issue 10 https://doi.org/10.1063/1.1394717	journal	September 2001
GaN MSM UV Photodetector With Sputtered AlN Nucleation Layer Wang, Chun-Kai; Chiou, Yu-Zung; Chang, Shoou-Jinn IEEE Sensors Journal, Vol. 15, Issue 9 https://doi.org/10.1109/JSEN.2015.2425657	journal	September 2015
GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments Son, Kyung-ah; Liao, Anna; Lung, Gerald Nanoscience and Nanotechnology Letters, Vol. 2, Issue 2 https://doi.org/10.1166/nnl.2010.1063	journal	June 2010
The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors Hu, X.; Choi, B. K.; Barnaby, H. J. IEEE Transactions on Nuclear Science, Vol. 51, Issue 2 https://doi.org/10.1109/TNS.2004.825077	journal	April 2004
Radiation hardness of gallium nitride Ionascut-Nedelcescu, A.; Carlone, C.; Houdayer, A. IEEE Transactions on Nuclear Science, Vol. 49, Issue 6 https://doi.org/10.1109/TNS.2002.805363	journal	December 2002
Toward Clean and Crackless Transfer of Graphene Liang, Xuelei; Sperling, Brent A.; Calizo, Irene ACS Nano, Vol. 5, Issue 11 https://doi.org/10.1021/nn203377t	journal	October 2011
Graphene as Transparent Electrodes: Fabrication and New Emerging Applications Xu, Yuanhong; Liu, Jingquan Small, Vol. 12, Issue 11 https://doi.org/10.1002/smll.201502988	journal	February 2016
Solar-Blind Photodetectors for Harsh Electronics Tsai, Dung-Sheng; Lien, Wei-Cheng; Lien, Der-Hsien Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep02628	journal	September 2013
Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications Lin, Chih-Ming; Yen, Ting-Ta; Felmetsger, Valery V. Applied Physics Letters, Vol. 97, Issue 8 https://doi.org/10.1063/1.3481361	journal	August 2010
Graphene–aluminum nitride NEMS resonant infrared detector Qian, Zhenyun; Hui, Yu; Liu, Fangze Microsystems & Nanoengineering, Vol. 2, Issue 1 https://doi.org/10.1038/micronano.2016.26	journal	June 2016
GaN MSM photodetectors fabricated on bulk GaN with low dark-current and high UV/visible rejection ratio Xie, Feng; Lu, Hai; Chen, Dunjun physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201000884	journal	April 2011
Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions Lv, Ling; Ma, Xiaohua; Zhang, Jincheng IEEE Transactions on Nuclear Science, Vol. 62, Issue 1 https://doi.org/10.1109/TNS.2014.2374178	journal	February 2015
Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors Chiamori, Heather C.; Miller, Ruth; Suria, Ateeq SPIE Sensing Technology + Applications, SPIE Proceedings https://doi.org/10.1117/12.2178091	conference	May 2015
Performance comparison of front- and back-illuminated AlGaN-based metal–semiconductor–metal solar-blind ultraviolet photodetectors Wang, Guosheng; Xie, Feng; Lu, Hai Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 1 https://doi.org/10.1116/1.4769250	journal	January 2013
Review—Ionizing Radiation Damage Effects on GaN Devices Pearton, S. J.; Ren, F.; Patrick, Erin ECS Journal of Solid State Science and Technology, Vol. 5, Issue 2 https://doi.org/10.1149/2.0251602jss	journal	November 2015
The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation Mathew, S.; Chan, T. K.; Zhan, D. Carbon, Vol. 49, Issue 5 https://doi.org/10.1016/j.carbon.2010.12.057	journal	April 2011
Graphene photonics and optoelectronics Bonaccorso, F.; Sun, Z.; Hasan, T. Nature Photonics, Vol. 4, Issue 9 https://doi.org/10.1038/nphoton.2010.186	journal	August 2010
A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays Miller, Ruth A.; So, Hongyun; Chiamori, Heather C. Review of Scientific Instruments, Vol. 87, Issue 9 https://doi.org/10.1063/1.4962704	journal	September 2016
Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy Hao, Yufeng; Wang, Yingying; Wang, Lei Small, Vol. 6, Issue 2 https://doi.org/10.1002/smll.200901173	journal	January 2010
Proton irradiation energy dependence of defect formation in graphene Lee, Sanggeun; Seo, Jungmok; Hong, Juree Applied Surface Science, Vol. 344 https://doi.org/10.1016/j.apsusc.2015.03.107	journal	July 2015
Graphene/GaN diodes for ultraviolet and visible photodetectors Lin, Fang; Chen, Shao-Wen; Meng, Jie Applied Physics Letters, Vol. 105, Issue 7 https://doi.org/10.1063/1.4893609	journal	August 2014
Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes Li, Xuesong; Zhu, Yanwu; Cai, Weiwei Nano Letters, Vol. 9, Issue 12 https://doi.org/10.1021/nl902623y	journal	December 2009
Energy and dose dependence of proton-irradiation damage in graphene Yang, Gwangseok; Kim, Byung-Jae; Kim, Kyeounghak RSC Advances, Vol. 5, Issue 40 https://doi.org/10.1039/C5RA03551A	journal	January 2015
The Near-Earth Space Radiation Environment Bourdarie, SÉbastien; Xapsos, Michael IEEE Transactions on Nuclear Science, Vol. 55, Issue 4 https://doi.org/10.1109/TNS.2008.2001409	journal	August 2008

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