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Title: Alloy-assisted deposition of three-dimensional arrays of atomic gold catalyst for crystal growth studies

Journal Article · · Nature Communications
 [1]; ORCiD logo [1]; ORCiD logo [2];  [3];  [1];  [4]; ORCiD logo [5];  [6];  [3];  [5];  [7];  [8]
  1. Univ. of Chicago, IL (United States). Dept. of Chemistry; Univ. of Chicago, IL (United States). James Franck Inst.
  2. Argonne National Lab. (ANL), Argonne, IL (United States). X-Ray Science Division
  3. Univ. of Illinois, Chicago, IL (United States). Research Resources Center
  4. Univ. of Chicago, IL (United States). Dept. of Chemistr
  5. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering; Northwestern Univ., Evanston, IL (United States). Center for Atom-Probe Tomography (NUCAPT)
  6. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  7. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Univ. of Chicago, IL (United States). Computation Inst.
  8. Univ. of Chicago, IL (United States). Dept. of Chemistry; Univ. of Chicago, IL (United States). James Franck Inst., and Inst. for Biophysical Dynamics

Large-scale assembly of individual atoms over smooth surfaces is difficult to achieve. A configuration of an atom reservoir, in which individual atoms can be readily extracted, may successfully address this challenge. In this work, we demonstrate that a liquid gold-silicon alloy established in classical vapor-liquid-solid growth can deposit ordered and three-dimensional rings of isolated gold atoms over silicon nanowire sidewalls. Here, we perform ab initio molecular dynamics simulation and unveil a surprising single atomic gold-catalyzed chemical etching of silicon. Experimental verification of this catalytic process in silicon nanowires yields dopant-dependent, massive and ordered 3D grooves with spacing down to similar to 5 nm. Finally, we use these grooves as self-labeled and ex situ markers to resolve several complex silicon growths, including the formation of nodes, kinks, scale-like interfaces, and curved backbones.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC); National Science Foundation (NSF); National Institutes of Health (NIH); Alfred P. Sloan Foundation; US Department of the Navy, Office of Naval Research (ONR)
Grant/Contract Number:
AC02-06CH11357; AC02-05CH11231
OSTI ID:
1425219
Journal Information:
Nature Communications, Vol. 8, Issue 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

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Cited By (4)

Talking to Cells: Semiconductor Nanomaterials at the Cellular Interface journal February 2018
Interfacial Contact is Required for Metal-Assisted Plasma Etching of Silicon journal October 2018
Inorganic semiconductor biointerfaces journal November 2018
In situ characterization of kinetics and mass transport of PbSe nanowire growth via LS and VLS mechanisms journal January 2019

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