Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca; Friedrich, Dennis; Horie, Yu; Arbabi, Amir; Faraon, Andrei; Atwater, Harry A.

doi:10.1038/s41598-017-05012-w

Title: Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Journal Article · Wed Jul 05 00:00:00 EDT 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-05012-w· OSTI ID:1425153

Emmer, Hal ^[1];

^[1]; Saive, Rebecca ^[1]; Friedrich, Dennis ^[2];

^[1]; Arbabi, Amir ^[1];

^[1]; Atwater, Harry A. ^[1]

California Inst. of Technology (CalTech), Pasadena, CA (United States). Applied Physics and Materials Science
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis; Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy and Inst. for Solar Fuels

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF₂ vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10¹⁷ cm^-3 that exhibited mobilities as high as 16 cm²V^-1s^-1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States); California Institute of Technology (CalTech), Pasadena, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EE0006335; AC02-05CH11231

OSTI ID:: 1425153

Journal Information:: Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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