Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

Crouse, Dustin; Simon, John; Schulte, Kevin L.; Young, David L.; Ptak, Aaron J.; Packard, Corinne E.

doi:10.1016/j.tsf.2018.01.031

Title: Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

Journal Article · Wed Jan 31 00:00:00 EST 2018 · Thin Solid Films

DOI:https://doi.org/10.1016/j.tsf.2018.01.031· OSTI ID:1424582

Crouse, Dustin ^[1]; Simon, John ^[2]; Schulte, Kevin L. ^[2]; Young, David L. ^[2]; Ptak, Aaron J. ^[2]; Packard, Corinne E. ^[3]

Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)

Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorous concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1424582

Alternate ID(s):: OSTI ID: 1548764

Report Number(s):: NREL/JA-5J00-71046

Journal Information:: Thin Solid Films, Vol. 649, Issue C; ISSN 0040-6090

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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References (19)

Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 9 https://doi.org/10.1002/pip.2776	journal	May 2016
26.1% thin-film GaAs solar cell using epitaxial lift-off Bauhuis, G. J.; Mulder, P.; Haverkamp, E. J. Solar Energy Materials and Solar Cells, Vol. 93, Issue 9 https://doi.org/10.1016/j.solmat.2009.03.027	journal	September 2009
Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies Bedell, Stephen W.; Shahrjerdi, Davood; Hekmatshoar, Bahman IEEE Journal of Photovoltaics, Vol. 2, Issue 2 https://doi.org/10.1109/JPHOTOV.2012.2184267	journal	April 2012
Layer transfer by controlled spalling Bedell, Stephen W.; Fogel, Keith; Lauro, Paul Journal of Physics D: Applied Physics, Vol. 46, Issue 15 https://doi.org/10.1088/0022-3727/46/15/152002	journal	March 2013
Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic Shahrjerdi, Davood; Bedell, Stephen W.; Bayram, Can Advanced Energy Materials, Vol. 3, Issue 5 https://doi.org/10.1002/aenm.201200827	journal	December 2012
Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films Alharbi, Abdullah; Shahrjerdi, Davood physica status solidi (RRL) - Rapid Research Letters, Vol. 10, Issue 8 https://doi.org/10.1002/pssr.201600163	journal	July 2016
Mixed Mode Cracking in Layered Materials Hutchinson, J. W.; Suo, Z. Advances in Applied Mechanics, Vol. 29, p. 63-191 https://doi.org/10.1016/S0065-2156(08)70164-9	book	January 1991
The cracking and decohesion of thin films Evans, A. G.; Drory, M. D.; Hu, M. S. Journal of Materials Research, Vol. 3, Issue 5 https://doi.org/10.1557/JMR.1988.1043	journal	October 1988
Controlled exfoliation of (100) GaAs-based devices by spalling fracture Sweet, Cassi A.; Schulte, Kevin L.; Simon, John D. Applied Physics Letters, Vol. 108, Issue 1 https://doi.org/10.1063/1.4939661	journal	January 2016
Effects of Process Conditions on Properties of Electroplated Ni Thin Films for Microsystem Applications Luo, J. K.; Pritschow, M.; Flewitt, A. J. Journal of The Electrochemical Society, Vol. 153, Issue 10 https://doi.org/10.1149/1.2223302	journal	January 2006
An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments Oliver, W. C.; Pharr, G. M. Journal of Materials Research, Vol. 7, Issue 06, p. 1564-1583 https://doi.org/10.1557/JMR.1992.1564	journal	June 1992
Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers Janssen, G. C. A. M.; Abdalla, M. M.; van Keulen, F. Thin Solid Films, Vol. 517, Issue 6 https://doi.org/10.1016/j.tsf.2008.07.014	journal	January 2009
Tailoring and patterning the grain size of nanocrystalline alloys Detor, A.; Schuh, C. Acta Materialia, Vol. 55, Issue 1 https://doi.org/10.1016/j.actamat.2006.08.032	journal	January 2007
Structural transitions in electroplated Ni-P alloys McMahon, G.; Erb, U. Journal of Materials Science Letters, Vol. 8, Issue 7 https://doi.org/10.1007/BF01730163	journal	July 1989
Electrochemical nickel–phosphorus alloy formation Daly, B. P.; Barry, F. J. International Materials Reviews, Vol. 48, Issue 5 https://doi.org/10.1179/095066003225008482	journal	October 2003
Dislocation strengthening in FCC metals and in BCC metals at high temperatures Madec, Ronan; Kubin, Ladislas P. Acta Materialia, Vol. 126 https://doi.org/10.1016/j.actamat.2016.12.040	journal	March 2017
Anisotropy effects on the reliability of single-crystal silicon Borrero-López, Oscar; Vodenitcharova, Tania; Hoffman, Mark Scripta Materialia, Vol. 63, Issue 10 https://doi.org/10.1016/j.scriptamat.2010.07.024	journal	November 2010
Sub-5 μ m-thick spalled single crystal Si foils by decoupling crack initiation and propagation Lee, Yong Hwan; Kim, Yong-Jae; Han, Seung Min Jane Applied Physics Letters, Vol. 109, Issue 13 https://doi.org/10.1063/1.4963292	journal	September 2016
Fracture toughness of germanium determined with the Vickers indentation technique Lemaitre, P. Journal of Materials Science Letters, Vol. 7, Issue 8 https://doi.org/10.1007/BF00723798	journal	August 1988

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Microstructural characterization and film-forming mechanism of a phosphate chemical conversion ceramic coating prepared on the surface of 2A12 aluminum alloy Huang, Shuai; Wang, Jian; Wei, Xiaowei RSC Advances, Vol. 9, Issue 33 https://doi.org/10.1039/c9ra01173k	journal	January 2019

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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
flexible electronics
thin film
substrate reuse
germanium
fracture
spalling
layer transfer
exfoliation