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Title: Suppression of Rotational Twins in Epitaxial B 12P 2 on 4H-SiC

Abstract

B 12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$$11\bar{20}$$] and a custom miscut 4° toward the [$$1\bar{10}0$$]. Epitaxy on substrates miscut to the [$$11\bar{20}$$] resulted in highly twinned B 12P 2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$$1\bar{10}0$$] produced films of >99% twin orientation I. A H 2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B 12P 2 twin orientations. Surface steps on substrates miscut to the [$$11\bar{20}$$] tend to be zig-zagged with steps rotated 60° from one another producing B 12P 2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$$1\bar{10}0$$] tend to be parallel resulting in crystallographically aligned B 12P 2 nucleation.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [2];  [3]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies; Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies
  3. Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
  4. Georgia Gwinnett College, Lawrenceville, GA (United States). School of Science and Technology
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1424076
Report Number(s):
LLNL-JRNL-731996
Journal ID: ISSN 1528-7483
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Crystal Growth and Design
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1528-7483
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 42 ENGINEERING

Citation Formats

Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., and Edgar, J. H.. Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC. United States: N. p., 2017. Web. doi:10.1021/acs.cgd.7b00867.
Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., & Edgar, J. H.. Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC. United States. doi:10.1021/acs.cgd.7b00867.
Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., and Edgar, J. H.. Fri . "Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC". United States. doi:10.1021/acs.cgd.7b00867.
@article{osti_1424076,
title = {Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC},
author = {Frye, C. D. and Saw, C. K. and Padavala, Balabalaji and Khan, Neelam and Nikolic, R. J. and Edgar, J. H.},
abstractNote = {B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$11\bar{20}$] and a custom miscut 4° toward the [$1\bar{10}0$]. Epitaxy on substrates miscut to the [$11\bar{20}$] resulted in highly twinned B12P2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$1\bar{10}0$] produced films of >99% twin orientation I. A H2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B12P2 twin orientations. Surface steps on substrates miscut to the [$11\bar{20}$] tend to be zig-zagged with steps rotated 60° from one another producing B12P2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$1\bar{10}0$] tend to be parallel resulting in crystallographically aligned B12P2 nucleation.},
doi = {10.1021/acs.cgd.7b00867},
journal = {Crystal Growth and Design},
number = 2,
volume = 18,
place = {United States},
year = {Fri Dec 22 00:00:00 EST 2017},
month = {Fri Dec 22 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
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