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Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC

Journal Article · · Crystal Growth and Design
 [1];  [2];  [3];  [4];  [2];  [3]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies; Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies
  3. Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
  4. Georgia Gwinnett College, Lawrenceville, GA (United States). School of Science and Technology
+ Show Author Affiliations

B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$$11\bar{20}$$] and a custom miscut 4° toward the [$$1\bar{10}0$$]. Epitaxy on substrates miscut to the [$$11\bar{20}$$] resulted in highly twinned B12P2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$$1\bar{10}0$$] produced films of >99% twin orientation I. A H2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B12P2 twin orientations. Surface steps on substrates miscut to the [$$11\bar{20}$$] tend to be zig-zagged with steps rotated 60° from one another producing B12P2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$$1\bar{10}0$$] tend to be parallel resulting in crystallographically aligned B12P2 nucleation.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC52-07NA27344
OSTI ID:
1424076
Report Number(s):
LLNL-JRNL--731996
Journal Information:
Crystal Growth and Design, Journal Name: Crystal Growth and Design Journal Issue: 2 Vol. 18; ISSN 1528-7483
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (23)

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