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Title: Growth of amorphous and epitaxial ZnSiP 2–Si alloys on Si

Abstract

ZnSiP 2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP 2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [2];  [1];  [2];  [2];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1423187
Report Number(s):
NREL/JA-5J00-70613
Journal ID: ISSN 2050-7526; JMCCCX; TRN: US1801717
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; band gap materials; optoelectronic materials and devices; multijunction photovoltaics; chemical vapor deposition; thin films

Citation Formats

Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si. United States: N. p., 2018. Web. doi:10.1039/C7TC05545E.
Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., & Tamboli, Adele C. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si. United States. doi:10.1039/C7TC05545E.
Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C. Tue . "Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si". United States. doi:10.1039/C7TC05545E.
@article{osti_1423187,
title = {Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si},
author = {Martinez, Aaron D. and Miller, Elisa M. and Norman, Andrew G. and Schnepf, Rekha R. and Leick, Noemi and Perkins, Craig and Stradins, Paul and Toberer, Eric S. and Tamboli, Adele C.},
abstractNote = {ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.},
doi = {10.1039/C7TC05545E},
journal = {Journal of Materials Chemistry C},
number = 11,
volume = 6,
place = {United States},
year = {Tue Jan 30 00:00:00 EST 2018},
month = {Tue Jan 30 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on January 30, 2019
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