skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si

Journal Article · · Journal of Materials Chemistry C
DOI:https://doi.org/10.1039/C7TC05545E· OSTI ID:1423187

ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1423187
Report Number(s):
NREL/JA-5J00-70613; JMCCCX; TRN: US1801717
Journal Information:
Journal of Materials Chemistry C, Vol. 6, Issue 11; ISSN 2050-7526
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 15 works
Citation information provided by
Web of Science

References (19)

Kramers–Kronig constrained variational analysis of optical spectra journal August 2005
Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH 3 surface preparation journal August 2015
Development of ZnSiP$_{\mathbf 2}$ for Si-Based Tandem Solar Cells journal January 2015
Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate journal March 2010
Optical, electrical, and photoelectrical properties of sputtered thin amorphous Zn 3 P 2 films journal June 1994
The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane journal September 2001
Surfactant-assisted growth of CdS thin films for photovoltaic applications journal May 2006
Parameterization of the dielectric function of semiconductor nanocrystals journal November 2014
In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd journal February 2016
Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition journal April 2013
Metamorphic epitaxy for multijunction solar cells journal March 2016
The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system journal February 1970
Dielectric function representation by B-splines journal April 2008
Characterization of vacuum grown thin films of ZnSnP2 journal May 1987
Epitaxial growth of solid solutions of ZnSiP2 in Si journal July 1972
Polar-on-nonpolar epitaxy journal February 1987
Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases journal July 2017
Optical Spectra and Energy Band Structure of the Monoclinic Crystals ZnP2 and ZnAs2 journal June 1972
Solar energy conversion properties and defect physics of ZnSiP$_2$ text January 2015

Cited By (1)

A new family of cation-disordered Zn(Cu)–Si–P compounds as high-performance anodes for next-generation Li-ion batteries journal January 2019

Figures / Tables (10)