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Title: InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.5018082· OSTI ID:1540160
 [1];  [2];  [3];  [4]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Korea Research Inst. of Standards and Science, Daejeon (South Korea). Advanced Instrumentation Inst.
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering; Korea Research Inst. of Standards and Science, Daejeon (South Korea). Advanced Instrumentation Inst.
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InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2–5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104–3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ~0.5 Sun. Finally, the estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9–2.4 eV varies from 16.6% to 34.3%.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AR0000472
OSTI ID:
1540160
Alternate ID(s):
OSTI ID: 1422662
Journal Information:
Journal of Applied Physics, Vol. 123, Issue 8; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science

References (13)

Hybrid solar converters for maximum exergy and inexpensive dispatchable electricity journal January 2015
Band gap-voltage offset and energy production in next-generation multijunction solar cells journal November 2010
High Efficiency Solar to Electric Energy Conversion through Spectrum Splitting and Multi-channel Full Spectrum Harvesting journal January 2013
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells journal April 2007
Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis journal January 2013
Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height journal February 2011
Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers journal January 2002
Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage journal March 2006
Effect of surfactant Sb on carrier lifetime in GaInP epilayers journal January 2002
High-quality Ge epilayers on Si with low threading-dislocation densities journal November 1999
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells journal July 2013
Structural optimization for single junction InGaP solar cells journal September 1994
Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates journal July 2005

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Related Subjects

14 SOLAR ENERGY
physics