Homo-endotaxial one-dimensional Si nanostructures

Song, Jiaming; Hudak, Bethany M.; Sims, Hunter; Sharma, Yogesh; Ward, Thomas Zac; Pantelides, Sokrates T.; Lupini, Andrew R.; Snijders, Paul C.

doi:10.1039/c7nr06968e

Title: Homo-endotaxial one-dimensional Si nanostructures

Journal Article · Wed Nov 29 00:00:00 EST 2017 · Nanoscale

DOI:https://doi.org/10.1039/c7nr06968e· OSTI ID:1422547

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Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

Homo-endotaxial 1D Si nanostructure with a higher conductance than the surrounding area.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1422547

Alternate ID(s):: OSTI ID: 1597861; OSTI ID: 1770675

Journal Information:: Nanoscale, Vol. 10, Issue 1; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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