Structure of TiO{sub 2}/SiO{sub 2} multilayer films

Journal Article · Sat Jan 01 04:00:00 EST 1994 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.2054690· OSTI ID:142219

Nakayama, Takahiro ^[1]

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1. Hitachi Ltd., Ibaraki (Japan). Hitachi Research Lab.

Sputtered TiO{sub 2}/SiO{sub 2} multilayer films were studied by Fourier-transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD), and their bonding structure and crystallization were compared with TiO{sub 2}-SiO{sub 2} composite films. The thickness ratio TiO{sub 2}/SiO{sub 2} of the multilayer films was fixed at 1:3, and the TiO{sub 2} monolayer thickness dt was varied from 0.3 to 60 nm. With decreasing dt, crystallization of TiO{sub 2} was lost, and the IR absorption at 930 cm{sup {minus}1} increased. These results suggest that SiO{sub 2} and TiO{sub 2} were changing their structure to a Ti{sub x}Si{sub y}O{sub z} composite state with decreasing dt. In the intermediate between anatase crystal and noncrystal, TiO{sub 2} of the multilayer films showed a different orientation from that of the composite films.

• Sponsoring Organization: USDOE
• OSTI ID: 142219
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 141; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL-PHASE TRANSFORMATIONS
LAYERS
SILICON OXIDES
SPUTTERING
TITANIUM OXIDES
VAPOR DEPOSITED COATINGS