Contactless measurement of equilibrium electron concentrations in n -type InAs/InAs1−xSbx type-II superlattices

Olson, B. V.; Kadlec, E. A.; Kim, J. K.; Klem, J. F.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.

doi:10.1063/1.4956351

Title: Contactless measurement of equilibrium electron concentrations in n -type InAs/InAs1−xSbx type-II superlattices

Journal Article · Tue Jul 12 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4956351· OSTI ID:1421230

; Kadlec, E. A.; Kim, J. K.; Klem, J. F.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.

Measurements of the equilibrium majority carrier electron concentration (n0) in narrow-bandgap n-type InAs/InAs1−xSbx type-II superlattices are made using contactless time-resolved microwave reflectance (TMR). By calibrating TMR decays to the number of optically injected electron-hole pairs, direct conversion to carrier lifetimes as a function of excited carrier density is made and allowing for accurate measurement of n0. The temperature dependence of both n0 and the intrinsic carrier density (ni) are measured using this method, where n0 = 1 × 1015 cm−3 and ni = 1.74 × 1011 cm−3 at 100 K. These results provide non-destructive insight into critical parameters that directly determine infrared photodetector dark diffusion current.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI ID:: 1421230

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 109 Journal Issue: 2; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (19)

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