Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Cui, Jizhai; Liang, Cheng-Yen; Paisley, Elizabeth A.; Sepulveda, Abdon; Ihlefeld, Jon F.; Carman, Gregory P.; Lynch, Christopher S.

doi:10.1063/1.4930071

Title: Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Journal Article · Wed Sep 02 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930071· OSTI ID:1421193

Cui, Jizhai; Liang, Cheng-Yen; Paisley, Elizabeth A.;

; Ihlefeld, Jon F.; Carman, Gregory P.;

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1421193

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 107 Journal Issue: 9; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 54 works

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References (26)

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