Novel type-II material system for laser applications in the near-infrared regime

Berger, C.; Möller, C.; Hens, P.; Fuchs, C.; Stolz, W.; Koch, S. W.; Ruiz Perez, A.; Hader, J.; Moloney, J. V.

doi:10.1063/1.4917180

Title: Novel type-II material system for laser applications in the near-infrared regime

Journal Article · Wed Apr 01 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4917180· OSTI ID:1184050

Berger, C.; Möller, C.; Hens, P.; Fuchs, C.; Stolz, W.; Koch, S. W.; Ruiz Perez, A.; Hader, J.; Moloney, J. V.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FA9550-13-C-0009

OSTI ID:: 1184050

Alternate ID(s):: OSTI ID: 1420676

Journal Information:: AIP Advances, Journal Name: AIP Advances Vol. 5 Journal Issue: 4; ISSN 2158-3226

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 27 works

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References (20)

Quantum Theory of the Optical and Electronic Properties of Semiconductors Haug, Hartmut; Koch, Stephan W. https://doi.org/10.1142/7184	book	January 2009
Antimonide Type-II “W” Lasers Vurgaftman, I.; Bewley, W. W.; Canedy, C. L. Mid-infrared Semiconductor Optoelectronics https://doi.org/10.1007/1-84628-209-8_5	book	January 2006
Enabling optical communication Murphy, Ed Nature Photonics, Vol. 4, Issue 5 https://doi.org/10.1038/nphoton.2010.107	journal	May 2010
Microscopic modeling of gain and luminescence in semiconductors Hader, J.; Moloney, J. V.; Koch, S. W. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, Issue 3 https://doi.org/10.1109/JSTQE.2003.818342	journal	May 2003
Many-body correlations and excitonic effects in semiconductor spectroscopy Kira, M.; Koch, S. W. Progress in Quantum Electronics, Vol. 30, Issue 5 https://doi.org/10.1016/j.pquantelec.2006.12.002	journal	January 2006
Realization and modeling of a pseudomorphic (GaAs _{1− x} Sb _x –In _y Ga _{1− y} As)/GaAs bilayer‐quantum well Peter, M.; Winkler, K.; Maier, M. Applied Physics Letters, Vol. 67, Issue 18 https://doi.org/10.1063/1.114321	journal	October 1995
Semiconductor Optoelectronic Devices Adams, A. R.; Silver, M.; Allam, J. High Pressure in Semiconductor Physics II https://doi.org/10.1016/S0080-8784(08)60083-6	book	January 1998
Passively modelocked surface-emitting semiconductor lasers Keller, Ursula; Tropper, Anne C. Physics Reports, Vol. 429, Issue 2 https://doi.org/10.1016/j.physrep.2006.03.004	journal	June 2006
Vertical-external-cavity semiconductor lasers Tropper, A. C.; Foreman, H. D.; Garnache, A. Journal of Physics D: Applied Physics, Vol. 37, Issue 9 https://doi.org/10.1088/0022-3727/37/9/R01	journal	April 2004
Type‐II quantum‐well lasers for the mid‐wavelength infrared Meyer, J. R.; Hoffman, C. A.; Bartoli, F. J. Applied Physics Letters, Vol. 67, Issue 6 https://doi.org/10.1063/1.115216	journal	August 1995
Quantum design of semiconductor active materials: laser and amplifier applications Moloney, J. V.; Hader, J.; Koch, S. W. Laser & Photonics Review, Vol. 1, Issue 1 https://doi.org/10.1002/lpor.200610003	journal	February 2007
Mechanism of suppression of Auger recombination processes in type‐II heterostructures Zegrya, Georgy G.; Andreev, Aleksey D. Applied Physics Letters, Vol. 67, Issue 18 https://doi.org/10.1063/1.114291	journal	October 1995
Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates Kudo, Makoto; Ouchi, Kiyoshi; Kasai, Jun-ichi Japanese Journal of Applied Physics, Vol. 41, Issue Part 2, No. 10A https://doi.org/10.1143/JJAP.41.L1040	journal	October 2002
Determination of the lattice strain and chemical composition of semiconductor heterostructures by high-resolution x-ray diffraction De Caro, Liberato; Giannini, Cinzia; Tapfer, Leander Journal of Applied Physics, Vol. 79, Issue 8 https://doi.org/10.1063/1.361773	journal	January 1996
k ⋅ p theory of the Franz-Keldysh effect Hader, Jörg; Linder, Norbert; Döhler, Gottfried H. Physical Review B, Vol. 55, Issue 11 https://doi.org/10.1103/PhysRevB.55.6960	journal	March 1997
Model of the field‐effect quantum‐well laser with free‐carrier screening and valence band mixing Ahn, D.; Chuang, S. L. Journal of Applied Physics, Vol. 64, Issue 11 https://doi.org/10.1063/1.342118	journal	December 1988
Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure Andreev, A. D.; O’Reilly, E. P. Applied Physics Letters, Vol. 84, Issue 11 https://doi.org/10.1063/1.1664033	journal	March 2004
Efficient band-structure calculations of strained quantum wells Chuang, Shun Lien Physical Review B, Vol. 43, Issue 12 https://doi.org/10.1103/PhysRevB.43.9649	journal	April 1991
High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams Kuznetsov, M.; Hakimi, F.; Sprague, R. IEEE Photonics Technology Letters, Vol. 9, Issue 8 https://doi.org/10.1109/68.605500	journal	August 1997
Microscopic theory of gain and spontaneous emission in GaInNAs laser material Hader, J.; Koch, S. W.; Moloney, J. V. Solid-State Electronics, Vol. 47, Issue 3 https://doi.org/10.1016/S0038-1101(02)00405-7	journal	March 2003

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