Effects of the d-donor level of vanadium on the properties of Zn1−xVxO films

García-Hemme, E.; Yu, K. M.; Wahnon, P.; González-Díaz, G.; Walukiewicz, W.

doi:10.1063/1.4919791

Effects of the d-donor level of vanadium on the properties of Zn1−xVxO films

Journal Article · Tue May 05 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919791· OSTI ID:1420505

García-Hemme, E.; ; Wahnon, P.; González-Díaz, G.; Walukiewicz, W.

We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn1−xVxO with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E+) and the downward shift of the fully occupied E− band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E+) and PL peak (E−) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1420505

Alternate ID(s):: OSTI ID: 22398999

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 106; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (20)

UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering Lim, J. -H.; Kang, C. -K.; Kim, K. -K. Advanced Materials, Vol. 18, Issue 20 https://doi.org/10.1002/adma.200502633	journal	October 2006
Centimeter-Long V2O5 Nanowires: From Synthesis to Field-Emission, Electrochemical, Electrical Transport, and Photoconductive Properties Zhai, Tianyou; Liu, Haimei; Li, Huiqiao Advanced Materials, Vol. 22, Issue 23 https://doi.org/10.1002/adma.200903586	journal	May 2010
Magnetic and electric properties of vanadium doped ZnO films Saeki, Hiromasa; Tabata, Hitoshi; Kawai, Tomoji Solid State Communications, Vol. 120, Issue 11 https://doi.org/10.1016/S0038-1098(01)00400-8	journal	November 2001
Role of vanadium content in ZnO thin films grown by pulsed laser deposition Koleva, M. E.; Atanasov, P. A.; Nedialkov, N. N. Applied Surface Science, Vol. 254, Issue 4 https://doi.org/10.1016/j.apsusc.2007.07.180	journal	December 2007
Study of vanadium doping effects on structural, opto-thermal and optical properties of sprayed ZnO semiconductor layers Mhamdi, A.; Boukhachem, A.; Madani, M. Optik - International Journal for Light and Electron Optics, Vol. 124, Issue 18 https://doi.org/10.1016/j.ijleo.2012.11.074	journal	September 2013
Intrinsic Optical Properties of Vanadium Dioxide near the Insulator−Metal Transition Liu, Wei-Tao; Cao, J.; Fan, W. Nano Letters, Vol. 11, Issue 2 https://doi.org/10.1021/nl1032205	journal	February 2011
Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy Look, D. C.; Reynolds, D. C.; Litton, C. W. Applied Physics Letters, Vol. 81, Issue 10 https://doi.org/10.1063/1.1504875	journal	September 2002
Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant Kim, Kyoung-Kook; Kim, Hyun-Sik; Hwang, Dae-Kue Applied Physics Letters, Vol. 83, Issue 1 https://doi.org/10.1063/1.1591064	journal	July 2003
A comprehensive review of ZnO materials and devices Özgür, Ü.; Alivov, Ya. I.; Liu, C. Journal of Applied Physics, Vol. 98, Issue 4 https://doi.org/10.1063/1.1992666	journal	August 2005
Epitaxial growth and properties of Zn1−xVxO diluted magnetic semiconductor thin films Ramachandran, S.; Tiwari, A.; Narayan, J. Applied Physics Letters, Vol. 87, Issue 17 https://doi.org/10.1063/1.2112185	journal	October 2005
Microstructure and photoluminescence study of vanadium-doped ZnO films Luo, J. T.; Zhu, X. Y.; Fan, B. Journal of Physics D: Applied Physics, Vol. 42, Issue 11 https://doi.org/10.1088/0022-3727/42/11/115109	journal	May 2009
Band anticrossing in highly mismatched III V semiconductor alloys Wu, J.; Shan, W.; Walukiewicz, W. Semiconductor Science and Technology, Vol. 17, Issue 8 https://doi.org/10.1088/0268-1242/17/8/315	journal	July 2002
Transparent conducting oxide semiconductors for transparent electrodes Minami, Tadatsugu Semiconductor Science and Technology, Vol. 20, Issue 4 https://doi.org/10.1088/0268-1242/20/4/004	journal	March 2005
Localized Magnetic States in Metals Anderson, P. W. Physical Review, Vol. 124, Issue 1 https://doi.org/10.1103/PhysRev.124.41	journal	October 1961
Transition-metal impurities in semiconductors and heterojunction band lineups Langer, Jerzy M.; Delerue, C.; Lannoo, M. Physical Review B, Vol. 38, Issue 11 https://doi.org/10.1103/PhysRevB.38.7723	journal	October 1988
Electronic Core Levels of the II B − VI A Compounds Vesely, C. J.; Langer, D. W. Physical Review B, Vol. 4, Issue 2 https://doi.org/10.1103/PhysRevB.4.451	journal	July 1971
Engineering the Electronic Band Structure for Multiband Solar Cells López, N.; Reichertz, L. A.; Yu, K. M. Physical Review Letters, Vol. 106, Issue 2 https://doi.org/10.1103/PhysRevLett.106.028701	journal	January 2011
Band Anticrossing in GaInNAs Alloys Shan, W.; Walukiewicz, W.; Ager, J. W. Physical Review Letters, Vol. 82, Issue 6 https://doi.org/10.1103/PhysRevLett.82.1221	journal	February 1999
Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries Walukiewicz, W.; Shan, W.; Yu, K. M. Physical Review Letters, Vol. 85, Issue 7 https://doi.org/10.1103/PhysRevLett.85.1552	journal	August 2000
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor Nomura, K. Science, Vol. 300, Issue 5623 https://doi.org/10.1126/science.1083212	journal	May 2003

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