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Title: Interband tunneling for hole injection in III-nitride ultraviolet emitters

Authors:
ORCiD logo [1];  [1];  [2];  [1];  [3];  [3];  [3];  [2];  [4]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
  2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
  3. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  4. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA, Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420458
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, and Rajan, Siddharth. Interband tunneling for hole injection in III-nitride ultraviolet emitters. United States: N. p., 2015. Web. doi:10.1063/1.4917529.
Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, & Rajan, Siddharth. Interband tunneling for hole injection in III-nitride ultraviolet emitters. United States. doi:10.1063/1.4917529.
Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, and Rajan, Siddharth. Mon . "Interband tunneling for hole injection in III-nitride ultraviolet emitters". United States. doi:10.1063/1.4917529.
@article{osti_1420458,
title = {Interband tunneling for hole injection in III-nitride ultraviolet emitters},
author = {Zhang, Yuewei and Krishnamoorthy, Sriram and Johnson, Jared M. and Akyol, Fatih and Allerman, Andrew and Moseley, Michael W. and Armstrong, Andrew and Hwang, Jinwoo and Rajan, Siddharth},
abstractNote = {},
doi = {10.1063/1.4917529},
journal = {Applied Physics Letters},
number = 14,
volume = 106,
place = {United States},
year = {Mon Apr 06 00:00:00 EDT 2015},
month = {Mon Apr 06 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4917529

Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

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Works referenced in this record:

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006

  • Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
  • Nature, Vol. 441, Issue 7091, p. 325-328
  • DOI: 10.1038/nature04760

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
journal, October 2014

  • Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth
  • Applied Physics Letters, Vol. 105, Issue 14, Article No. 141104
  • DOI: 10.1063/1.4897342

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
journal, March 2009

  • Nakarmi, M. L.; Nepal, N.; Lin, J. Y.
  • Applied Physics Letters, Vol. 94, Issue 9, Article No. 091903
  • DOI: 10.1063/1.3094754