Size-tunable Lateral Confinement in Monolayer Semiconductors

Wei, Guohua; Czaplewski, David A.; Lenferink, Erik J.; Stanev, Teodor K.; Jung, Il Woong; Stern, Nathaniel P.

doi:10.1038/s41598-017-03594-z

Title: Size-tunable Lateral Confinement in Monolayer Semiconductors

Journal Article · Mon Jun 12 00:00:00 EDT 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-03594-z· OSTI ID:1420072

Wei, Guohua ^[1]; Czaplewski, David A. ^[2]; Lenferink, Erik J. ^[3]; Stanev, Teodor K. ^[3]; Jung, Il Woong ^[2];

^[4]

Northwestern Univ., Evanston, IL (United States). Applied Physics Program
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Northwestern Univ., Evanston, IL (United States). Dept. of Physics and Astronomy
Northwestern Univ., Evanston, IL (United States). Applied Physics Program; Northwestern Univ., Evanston, IL (United States). Dept. of Physics and Astronomy

Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here in this paper, we show that laterally-confined excitons in monolayer MoS₂ nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS₂ nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC02-06CH11357; SC0012130

OSTI ID:: 1420072

Journal Information:: Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 48 works

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