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Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5005893· OSTI ID:1419948
 [1];  [1];  [2];  [3];  [1]
  1. Indian Inst. of Technology (IIT), Delhi (India). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Univ. of Gothenburg (Sweden). Dept. of Physics; KTH Royal Inst. of Technology, Stockholm (Sweden). Materials and NanoPhysics, School of Engineering Sciences
Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
India Department of Science and Technology; Swedish Foundation for Strategic Research (SSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1419948
Alternate ID(s):
OSTI ID: 1416222
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 112; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (4)


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