Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Greenaway, Ann L.; Bachman, Benjamin F.; Boucher, Jason W.; Funch, Christopher J.; Aloni, Shaul; Boettcher, Shannon W.

doi:10.1021/acsaem.7b00199

Title: Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Journal Article · Fri Jan 12 00:00:00 EST 2018 · ACS Applied Energy Materials

DOI:https://doi.org/10.1021/acsaem.7b00199· OSTI ID:1418846

^[1]; Bachman, Benjamin F. ^[1]; Boucher, Jason W. ^[2]; Funch, Christopher J. ^[1]; Aloni, Shaul ^[3];

^[1]

Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States
Department of Physics, University of Oregon, Eugene, Oregon 97403, United States
The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Ga_1–xIn_xP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga_1–xIn_xP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H₂ at 850 °C affords smooth films with electron mobility of 1070 cm² V^–1 s^–1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Univ. of Oregon, Eugene, OR (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office