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Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Journal Article · · ACS Applied Energy Materials
 [1];  [2];  [3];  [2];  [4];  [2]
  1. Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States; University of Oregon
  2. Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States
  3. Department of Physics, University of Oregon, Eugene, Oregon 97403, United States
  4. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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Ga1–xInxP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga1–xInxP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H2 at 850 °C affords smooth films with electron mobility of 1070 cm2 V–1 s–1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.

Research Organization:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Grant/Contract Number:
EE0007361; AC02-05CH11231
OSTI ID:
1418846
Journal Information:
ACS Applied Energy Materials, Journal Name: ACS Applied Energy Materials Journal Issue: 2 Vol. 1; ISSN 2574-0962
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

Figures / Tables (5)

Figure 1(p. 5)figure Figure 1
Figure 2(p. 6)figure Figure 2
Figure 3(p. 8)figure Figure 3
Figure 4(p. 10)figure Figure 4
Figure 5(p. 12)figure Figure 5

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Hall effect
III−V semiconductor
epitaxy
low-cost
photoelectrochemistry
photovoltaics