van der Waals epitaxy of CdTe thin film on graphene

Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

doi:10.1063/1.4964127

van der Waals epitaxy of CdTe thin film on graphene

Journal Article · Mon Oct 03 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4964127· OSTI ID:1418596

Mohanty, Dibyajyoti ^[1]; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

DOE OSTI

van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. Here in this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO₂/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

View Accepted Manuscript (DOE)

Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231; SC0002623

OSTI ID:: 1418596

Alternate ID(s):: OSTI ID: 1328555
OSTI ID: 1465766

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 109; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Remote homoepitaxy of ZnO microrods across graphene layers Jeong, Junseok; Min, Kyung-Ah; Shin, Dong Hoon Nanoscale, Vol. 10, Issue 48 https://doi.org/10.1039/c8nr08084d	journal	January 2018
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