High-Pressure Band-Gap Engineering in Lead-Free Cs 2 AgBiBr 6 Double Perovskite

Li, Qian; Wang, Yonggang; Pan, Weicheng; Yang, Wenge; Zou, Bo; Tang, Jiang; Quan, Zewei

doi:10.1002/anie.201708684

High-Pressure Band-Gap Engineering in Lead-Free Cs ₂ AgBiBr ₆ Double Perovskite

Journal Article · Wed Nov 15 04:00:00 EST 2017 · Angewandte Chemie (International Edition)

DOI:https://doi.org/10.1002/anie.201708684· OSTI ID:1418050

^[1]; Wang, Yonggang ^[2]; Pan, Weicheng ^[3]; Yang, Wenge ^[2]; Zou, Bo ^[4]; Tang, Jiang ^[3]; ^[5]

Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen Guangdong 518055 P.R. China; College of Chemistry, Nankai University, Tianjin 300071 P.R. China
High Pressure Synergetic Consortium, HPSynC, Geophysical Laboratory, Carnegie Institution of Washington, Argonne IL 60439 USA
Wuhan National Laboratory for Optoelectronics, WNLO and School of Optical and Electronic Information, Huazhong University of Science and Technology, HUST, Wuhan 430074 P.R. China
State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 P.R. China
Department of Chemistry, Southern University of Science and Technology, SUSTech, Shenzhen Guangdong 518055 P.R. China

Novel inorganic lead-free double perovskites with improved stability are regarded as alternatives to state-of-art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs2AgBiBr6 double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs2AgBiBr6 is, for the first time, achieved on inorganic photovoltaic double perovskites through high pressure treatments. Moreover, the narrowed band gap is partially retainable after releasing pressure, promoting its optoelectronic applications. This work not only provides novel insights into the structure–property relationship in lead-free double perovskites, but also offers new strategies for further development of advanced perovskite devices.

Research Organization:: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)

Sponsoring Organization:: DOE - BASIC ENERGY SCIENCESNSFDOE-NNSAFOREIGN

OSTI ID:: 1418050

Journal Information:: Angewandte Chemie (International Edition), Journal Name: Angewandte Chemie (International Edition) Journal Issue: 50 Vol. 56; ISSN 1433-7851

Publisher:: Wiley

Country of Publication:: United States

Language:: ENGLISH

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