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Title: Method for forming silver-copper mixed kesterite semiconductor film

Patent ·
OSTI ID:1417849
; ; ;

After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<2, and 0.ltoreq.y.ltoreq.1.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
9,876,130
Application Number:
15/336,427
OSTI ID:
1417849
Resource Relation:
Patent File Date: 2016 Oct 27
Country of Publication:
United States
Language:
English

References (7)

Capping layers for improved crystallization patent June 2016
Multi-Nary Group IB And Via Based Semiconductor patent-application July 2012
Multi-Nary Group IB and Via Based Semiconductor patent-application December 2012
Absorbers For High-Efficiency Thin-Film PV patent-application June 2013
Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor patent-application November 2013
Back Contact Substrate for a Photovoltaic Cell or Module patent-application March 2016
Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1-x)2 ZnSnSe4 journal March 2016

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36 MATERIALS SCIENCE