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Title: Method for forming silver-copper mixed kesterite semiconductor film

Abstract

After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0

Inventors:
; ; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1417849
Patent Number(s):
9,876,130
Application Number:
15/336,427
Assignee:
International Business Machines Corporation (Armonk, NY) DOEEE
DOE Contract Number:
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Oct 27
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film. United States: N. p., 2018. Web.
Gershon, Talia S., Gunawan, Oki, Lee, Yun S., & Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film. United States.
Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. 2018. "Method for forming silver-copper mixed kesterite semiconductor film". United States. doi:. https://www.osti.gov/servlets/purl/1417849.
@article{osti_1417849,
title = {Method for forming silver-copper mixed kesterite semiconductor film},
author = {Gershon, Talia S. and Gunawan, Oki and Lee, Yun S. and Mankad, Ravin},
abstractNote = {After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2018,
month = 1
}

Patent:

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