Structure and composition of plasma-deposited SiO{sub x} films

Conference · Fri Dec 31 04:00:00 EST 1993

OSTI ID:141622

Sheen, C W; Parks, J M; Dwight, D W ^[1]; Allara, D L ^[2]

---

1. Polar Materials, Inc., Martins Creek, PA (United States)
2. Pennsylvania State Univ., University Park, PA (United States)

Plasma deposition from siloxane plus oxidizer precursors can produce a wide variety of thin film compositions and structures. The first objective is to develop characterization protocols for these films; then process-structure-property relationships will be studied. SiO{sub x} films were deposited on polyester and polypropylene films and on silicon wafers, as well. Layer thickness and void content were determined by spectroscopic ellipsometry. XPS and FTIR provided complementary information on chemical composition and bonding; SIMS was used for atomic depth profiling. Topography and fracture cross sections were observed with SEM and AFM. This combination of analyses is sensitive to changes in structure that result from changing the plasma parameters.

• OSTI ID: 141622
• Report Number(s): CONF-930304--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
CHEMICAL BONDS
CORRELATIONS
DEPOSITION
MORPHOLOGY
PARAMETRIC ANALYSIS
PORE STRUCTURE
SILICON OXIDES
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS