Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi

Dhital, C.; DeBeer-Schmitt, L.; Zhang, Q.; Xie, W.; Young, D. P.; DiTusa, J. F.

doi:10.1103/PhysRevB.96.214425

Title: Exploring the origins of the Dzyaloshinskii-Moriya interaction in MnSi

Journal Article · Tue Dec 19 00:00:00 EST 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.96.214425· OSTI ID:1414441

Dhital, C. ^[1]; DeBeer-Schmitt, L. ^[2]; Zhang, Q. ^[3]; Xie, W. ^[4]; Young, D. P. ^[1]; DiTusa, J. F. ^[1]

Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Chemistry

By using magnetization and small-angle neutron scattering measurements, we have investigated the magnetic behavior of the Mn_1-xIr_xSi system to explore the effect of increased carrier density and spin-orbit interaction on the magnetic properties of MnSi. We determine estimates of the spin wave stiffness and the Dzyaloshinskii-Moriya (DM) interaction strength and compare with Mn_1-xCo_xSi and Mn1-xFexSi. Despite the large differences in atomic mass and size of the substituted elements, Mn_1-xCo_xSi and Mn_1-xIr_xSi show nearly identical variations in their magnetic properties with substitution. We find a systematic dependence of the transition temperature, the ordered moment, the helix period, and the DM interaction strength with electron count for Mn_1-xIr_xSi,Mn_1-xCo_xSi, and Mn_1-xFe_xSi, indicating that the magnetic behavior is primarily dependent upon the additional carrier density, rather than on the mass or size of the substituting species. This indicates that the variation in magnetic properties, including the DM interaction strength, is primarily controlled by the electronic structure, as Co and Ir are isovalent. Lastly, our work suggests that although the rigid band model of electronic structure, along with Moriya's model of weak itinerant magnetism, describes this system surprisingly well, phenomenological models for the DM interaction strength are not adequate to describe this system.

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Research Organization:: Louisiana State Univ., Baton Rouge, LA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012432; AC05-00OR22725

OSTI ID:: 1414441

Alternate ID(s):: OSTI ID: 1414042; OSTI ID: 1423069

Journal Information:: Physical Review B, Vol. 96, Issue 21; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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Effect of Ge-substitution on Magnetic Properties in the Itinerant Chiral Magnet MnSi Aji, Seno; Ishida, Hidesato; Okuyama, Daisuke arXiv https://doi.org/10.48550/arxiv.1909.13246	text	January 2019

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