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An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3

Journal Article · · Physica. C, Superconductivity
 [1];  [2];  [3];  [2];  [2];  [4];  [4];  [2]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Notre Dame, IN (United States). Department of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. University of Illinois at Urbana-Champaign, Urbana, IL (United States). Department of Physics
  4. Missouri University of Science and Technology, Rolla, MO (United States). Department of Physics
Here, we report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1413746
Alternate ID(s):
OSTI ID: 22801821
OSTI ID: 1496329
Journal Information:
Physica. C, Superconductivity, Journal Name: Physica. C, Superconductivity Journal Issue: C Vol. 543; ISSN 0921-4534
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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