Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations

Journal Article · Thu Nov 16 00:00:00 EST 2017 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2017.2774759· OSTI ID:1411610

Tonigan, Andrew M. ^[1]; Arutt, Charles N. ^[2]; Parma, Edward J. ^[3]; Griffin, Patrick J. ^[3]; Fleetwood, Daniel M. ^[2]; Schrimpf, Ronald D. ^[2]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Vanderbilt Univ., Nashville, TN (United States). Department of Electrical Engineering and Computer Science
2. Vanderbilt Univ., Nashville, TN (United States). Department of Electrical Engineering and Computer Science
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

For this research, a bipolar-transistor-based sensor technique has been used to compare silicon displacement damage from known and unknown neutron energy spectra generated in nuclear reactor and high-energy-density physics environments. The technique has been shown to yield 1-MeV(Si) equivalent neutron fluence measurements comparable to traditional neutron activation dosimetry. This study significantly extends previous results by evaluating three types of bipolar devices utilized as displacement damage sensors at a nuclear research reactor and at a Pelletron particle accelerator. Ionizing dose effects are compensated for via comparisons with 10-keV x-ray and/or cobalt-60 gamma ray irradiations. Non-ionizing energy loss calculations adequately approximate the correlations between particle-device responses and provide evidence for the use of one particle type to screen the sensitivity of the other.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1411610
• Report Number(s): SAND-2017-7419J; 655345; TRN: US1800248
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 65, Issue 1; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

22 GENERAL STUDIES OF NUCLEAR REACTORS
43 PARTICLE ACCELERATORS
displacement damage
silicon bipolar transistors
non-ionizing energy loss
ionizing dose
neutron dosimetry
commercial-off-the-shelf parts