Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.; Jena, D.; Johnson, N. M.; Jones, K. A.; Kaplar, R. J.; Rajan, S.; Van de Walle, C. G.; Bellotti, E.; Chua, C. L.; Collazo, R.; Coltrin, M. E.; Cooper, J. A.; Evans, K. R.; Graham, S.; Grotjohn, T. A.; Heller, E. R.; Higashiwaki, M.; Islam, M. S.; Juodawlkis, P. W.; Khan, M. A.; Koehler, A. D.; Leach, J. H.; Mishra, U. K.; Nemanich, R. J.; Pilawa‐Podgurski, R. C. N.; Shealy, J. B.; Sitar, Z.; Tadjer, M. J.; Witulski, A. F.; Wraback, M.; Simmons, J. A.

doi:10.1002/aelm.201600501

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Journal Article · Mon Dec 04 00:00:00 UTC 2017 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201600501· OSTI ID:1463923

^[1]; Chowdhury, S. ^[2]; Hollis, M. A. ^[3]; Jena, D. ^[4]; Johnson, N. M. ^[5]; Jones, K. A. ^[6]; Kaplar, R. J. ^[7]; Rajan, S. ^[8]; Van de Walle, C. G. ^[9]; Bellotti, E. ^[10]; Chua, C. L. ^[5]; Collazo, R. ^[11]; Coltrin, M. E. ^[12]; Cooper, J. A. ^[13]; Evans, K. R. ^[14]; Graham, S. ^[15]; Grotjohn, T. A. ^[16]; Heller, E. R. ^[17]; Higashiwaki, M. ^[18]; Islam, M. S. ^[19] more »

Material, Physical, and Chemical Sciences Center Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1421 USA
Electrical and Computer Engineering Department University of California Davis 3133 Kemper Hall Davis CA 95616 USA
Advanced Technology Division MIT Lincoln Laboratory 244 Wood Street Lexington MA 02421‐6426 USA
Electrical and Computer Engineering and Materials Science and Engineering Departments Cornell University 326 Bard Hall Ithaca NY 14853 USA
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Abstract

Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga ₂ O ₃ , advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NA0003525

OSTI ID:: 1463923

Alternate ID(s):: OSTI ID: 1411257

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 1 Vol. 4; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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