Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.; Jena, D.; Johnson, N. M.; Jones, K. A.; Kaplar, R. J.; Rajan, S.; Van de Walle, C. G.; Bellotti, E.; Chua, C. L.; Collazo, R.; Coltrin, M. E.; Cooper, J. A.; Evans, K. R.; Graham, S.; Grotjohn, T. A.; Heller, E. R.; Higashiwaki, M.; Islam, M. S.; Juodawlkis, P. W.; Khan, M. A.; Koehler, A. D.; Leach, J. H.; Mishra, U. K.; Nemanich, R. J.; Pilawa‐Podgurski, R. C. N.; Shealy, J. B.; Sitar, Z.; Tadjer, M. J.; Witulski, A. F.; Wraback, M.; Simmons, J. A.

doi:10.1002/aelm.201600501

Title: Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Journal Article · Mon Dec 04 00:00:00 EST 2017 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201600501· OSTI ID:1463923

^[1]; Chowdhury, S. ^[2]; Hollis, M. A. ^[3]; Jena, D. ^[4]; Johnson, N. M. ^[5]; Jones, K. A. ^[6]; Kaplar, R. J. ^[7]; Rajan, S. ^[8]; Van de Walle, C. G. ^[9]; Bellotti, E. ^[10]; Chua, C. L. ^[5]; Collazo, R. ^[11]; Coltrin, M. E. ^[12]; Cooper, J. A. ^[13]; Evans, K. R. ^[14]; Graham, S. ^[15]; Grotjohn, T. A. ^[16]; Heller, E. R. ^[17]; Higashiwaki, M. ^[18]; Islam, M. S. ^[19] more »

Material, Physical, and Chemical Sciences Center Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1421 USA
Electrical and Computer Engineering Department University of California Davis 3133 Kemper Hall Davis CA 95616 USA
Advanced Technology Division MIT Lincoln Laboratory 244 Wood Street Lexington MA 02421‐6426 USA
Electrical and Computer Engineering and Materials Science and Engineering Departments Cornell University 326 Bard Hall Ithaca NY 14853 USA
Electronic Materials and Devices Laboratory PARC 3333 Coyote Hill Road Palo Alto CA 94303 USA
Sensors and Electron Devices Directorate U.S. Army Research Laboratory 2800 Powder Mill Road Delphi MD 20783 USA
Material, Physical, and Chemical Sciences Center Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1086 USA
Electrical and Computer Engineering and Materials Science and Engineering Departments Ohio State University 2015 Neil Avenue, 205 Dreese Laboratory Columbus OH 43210 USA
Materials Department University of California Santa Barbara 2510 Engineering II Santa Barbara CA 93106‐5050 USA
Electrical and Computer Engineering Department Boston University 8 St. Mary's Street Room 533 Boston MA 02215 USA
Materials Science and Engineering Department North Carolina State University 911 Partners Way (EBI 219) Raleigh NC 27695 USA
Material, Physical, and Chemical Sciences Center Sandia National Laboratories PO Box 5800 Albuquerque NM 87185 USA
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Kyma Technologies, Inc. 8829 Midway West Rd Raleigh NC 27617 USA
Mechanical Engineering Department Georgia Institute of Technology 771 Ferst Drive Atlanta GA 30332 USA
Electrical and Computer Engineering Department Michigan State University 2120 Engineering Building East Lansing MI 48824 USA
Materials and Manufacturing Directorate Air Force Research Laboratory 3005 Hobson Way WPAFB OH 45433 USA
Green ICT Device Advanced Development Center National Institute of Information and Communications Technology 4‐2‐1 Nukui‐Kitamachi Koganei Tokyo 184‐0015 Japan
Electrical and Computer Engineering Department University of California at Davis 3139 Kemper Hall Davis CA 95616 USA
Quantum Information and Integrated Nanosystems Group MIT Lincoln Laboratory 244 Wood Street Lexington MA 02421‐6426 USA
Electrical Engineering Department University of South Carolina 301 Main Street (Swearingen 3A26) Columbia SC 29208 USA
High Power Electronics Branch Naval Research Laboratory 4555 Overlook Ave SW Washington DC 20375 USA
Electrical and Computer Engineering Department University of California Santa Barbara 2215C Engineering Science Building Santa Barbara CA 93106 USA
Physics Department Arizona State University PO Box 871504 Tempe AZ 85287‐1504 USA
Electrical and Computer Engineering University of Illinois Urbana‐Champaign 306 North Wright Street (4042 ECE) Urbana, Illinois 61801 USA
Akoustis Technologies 9805‐H Northcross Center Court Huntersville NC 28078 USA
Materials Science and Engineering Department North Carolina State University 911 Partners Way (EBI 217) Raleigh NC 27695 USA
Electrical Engineering Department Vanderbilt University 1025 16th Av. South, Ste. 200 Nashville TN 37235‐1553 USA
Sensors and Electron Devices Directorate U.S. Army Research Laboratory 2800 Powder Mill Road Adelphi MD 20783 USA
Advanced Science and Technology Division Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1421 USA

Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga ₂ O ₃ , advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

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Sponsoring Organization:: USDOE

OSTI ID:: 1463923

Alternate ID(s):: OSTI ID: 1411257

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Vol. 4 Journal Issue: 1; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

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