Ion implantation for deterministic single atom devices
Journal Article
·
· Review of Scientific Instruments
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Here, we demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1411229
- Report Number(s):
- SAND--2017-11983J; 658452
- Journal Information:
- Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 12 Vol. 88; ISSN 0034-6748
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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