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Properties of the ferroelectric visible light absorbing semiconductors: Sn2P2S6 and Sn2P2Se6

Journal Article · · Physical Review Materials
 [1];  [2]
  1. Univ. of Missouri, Columbia, MO (United States); University of Missouri
  2. Univ. of Missouri, Columbia, MO (United States)
Ferroelectrics with suitable band gaps have recently attracted attention as candidate solar absorbing materials for photovoltaics. The inversion symmetry breaking may promote the separation of photoexcited carriers and allow voltages higher than the band gap. However, these effects are not fully understood, in part because of a lack of suitable model systems for studying these effects in detail. Here, we report properties of ferroelectric Sn2P2S6 and Sn2P2Se6 using first principles calculations. Results are given for the electronic structure, carrier pocket shapes, optical absorption, and transport.We find indirect band gaps of 2.20 eV and 1.55 eV, respectively, and favorable band structures for carrier transport, including both holes and electrons. Strong absorption is found above the direct gaps of 2.43 eV and 1.76 eV. Furthermore these compounds may serve as useful model systems for understanding photovoltaic effects in ferroelectric semiconductors.
Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Univ. of Missouri, Columbia, MO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0001299; SC0014607
OSTI ID:
1411147
Alternate ID(s):
OSTI ID: 1411271
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 7 Vol. 1; ISSN PRMHAR; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (7)

Rational design of new phases of tin monosulfide by first-principles structure searches journal August 2018
First principles based screen for identification of transparent conductors journal January 2019
Progress in BiFeO 3 -based heterostructures: materials, properties and applications journal January 2020
Ultrafast spectroscopy of shift-current in ferroelectric semiconductor Sn 2 P 2 S 6 journal April 2019
Semilocal exchange-correlation potentials for solid-state calculations: Current status and future directions journal September 2019
Band-Gap Reduction in ( Bi Cr O 3 ) m / ( Bi Fe O 3 ) n Superlattices: Designing Low-Band-Gap Ferroelectrics journal October 2018
Photovoltaic and photoelectric response of Sn 2 P 2 S 6 ferroelectric films journal February 2019

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