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Title: Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Abstract

Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1409581
Report Number(s):
BNL-114633-2017-JA¿¿¿
Journal ID: ISSN 0734-2101
DOE Contract Number:  
SC0012704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 35; Journal Issue: 3
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Anderson, Virginia R., Nepal, Neeraj, Johnson, Scooter D., Robinson, Zachary R., Nath, Anindya, Kozen, Alexander C., Qadri, Syed B., DeMasi, Alexander, Hite, Jennifer K., Ludwig, Karl F., and Eddy, Charles R. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering. United States: N. p., 2017. Web. doi:10.1116/1.4979007.
Anderson, Virginia R., Nepal, Neeraj, Johnson, Scooter D., Robinson, Zachary R., Nath, Anindya, Kozen, Alexander C., Qadri, Syed B., DeMasi, Alexander, Hite, Jennifer K., Ludwig, Karl F., & Eddy, Charles R. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering. United States. doi:10.1116/1.4979007.
Anderson, Virginia R., Nepal, Neeraj, Johnson, Scooter D., Robinson, Zachary R., Nath, Anindya, Kozen, Alexander C., Qadri, Syed B., DeMasi, Alexander, Hite, Jennifer K., Ludwig, Karl F., and Eddy, Charles R. Mon . "Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering". United States. doi:10.1116/1.4979007.
@article{osti_1409581,
title = {Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering},
author = {Anderson, Virginia R. and Nepal, Neeraj and Johnson, Scooter D. and Robinson, Zachary R. and Nath, Anindya and Kozen, Alexander C. and Qadri, Syed B. and DeMasi, Alexander and Hite, Jennifer K. and Ludwig, Karl F. and Eddy, Charles R.},
abstractNote = {Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.},
doi = {10.1116/1.4979007},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 3,
volume = 35,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2017},
month = {Mon May 01 00:00:00 EDT 2017}
}