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Title: Monitoring Deformation in Graphene Through Hyperspectral Synchrotron Spectroscopy to Inform Fabrication

Journal Article · · Journal of Physical Chemistry. C
 [1];  [1];  [2];  [2];  [2];  [3];  [4];  [4]; ORCiD logo [5];  [6]; ORCiD logo [2]; ORCiD logo [7]; ORCiD logo [7];  [2];  [8]; ORCiD logo [9]
  1. School of Electronic Engineering, Bangor University, Bangor, LL571UT, U.K.
  2. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Fairborn, Ohio 45433, United States
  3. National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
  4. Synchrotron Research Inc., Melbourne, Florida 32901, United States
  5. Department of Chemistry, Texas A&,M University, College Station, Texas 77840, United States
  6. Carl Zeiss Microscopy, LLC, One Corporation Way, Peabody, Massachusetts 01960, United States
  7. Stanford Synchrotron Radiation Laboratory, Stanford University, SLAC, Stanford, California 94309, United States
  8. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
  9. School of Electronic Engineering, Bangor University, Bangor, LL571UT, U.K.; Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, United States

The promise from graphene to produce devices with high mobilities and detectors with fast response times is truncated in practice by strain and deformation originating during growth and subsequent processing. This work describes effects from graphene growth, multiple layer transfer, and substrate termination on out of plane deformation, critical to device performance. Synchrotron spectroscopy data was acquired with a state-of-the-art hyperspectral large-area detector to describe growth and processing with molecular sensitivity at wafer length scales. A study of methodologies used in data analysis discouraged dichroic ratio approaches in favor of orbital vector approximations and data mining algorithms. Orbital vector methods provide a physical insight into mobility-detrimental rippling by identifying ripple frequency as main actor, rather than intensity; which was confirmed by data mining algorithms, and in good agreement with electron scattering theories of corrugation in graphene. This work paves the way to efficient information from mechanical properties in graphene in a high throughput mode throughout growth and processing in a materials by design approach.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
SC0012704
OSTI ID:
1409572
Report Number(s):
BNL-114624-2017-JA¿¿¿
Journal Information:
Journal of Physical Chemistry. C, Vol. 121, Issue 29; ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

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