Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

Xie, Weiyu; Lu, Toh -Ming; Wang, Gwo -Ching; Bhat, Ishwara; Zhang, Shengbai

doi:10.1103/PhysRevMaterials.1.063402

Title: Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

Journal Article · Tue Nov 14 00:00:00 EST 2017 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.1.063402· OSTI ID:1408769

Xie, Weiyu ^[1]; Lu, Toh -Ming ^[1]; Wang, Gwo -Ching ^[1]; Bhat, Ishwara ^[1]; Zhang, Shengbai ^[1]

Rensselaer Polytechnic Institute, Troy, NY (United States)

Enhanced van der Waals (vdW) epitaxy of semiconductors on a layered vdW substrate is identified as the formation of dative bonds. For example, despite that NbSe₂ is a vdW layeredmaterial, first-principles calculations reveal that the bond strength at a CdTe-NbSe₂ interface is five times as large as that of vdW interactions at a CdTe-graphene interface. Finally, the unconventional chemistry here is enabled by an effective net electron transfer from Cd dangling-bond states at a CdTe surface to metallic nonbonding NbSe₂ states, which is a necessary condition to activate the Cd for enhanced binding with Se.

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Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1408769

Alternate ID(s):: OSTI ID: 1408797

Journal Information:: Physical Review Materials, Vol. 1, Issue 6; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (26)

Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs Hong, Young Joon; Yang, Jae Won; Lee, Wi Hyoung Advanced Materials, Vol. 25, Issue 47 https://doi.org/10.1002/adma.201302312	journal	September 2013
Freestanding van der Waals Heterostructures of Graphene and Transition Metal Dichalcogenides Azizi, Amin; Eichfeld, Sarah; Geschwind, Gayle ACS Nano, Vol. 9, Issue 5 https://doi.org/10.1021/acsnano.5b01677	journal	May 2015
Epitaxial growth of II–VI semiconductor CdTe on a layered material NbSe2 Kuroda, Shinji; Minami, Kôhei; Takita, Kôki Journal of Crystal Growth, Vol. 262, Issue 1-4 https://doi.org/10.1016/j.jcrysgro.2003.10.048	journal	February 2004
Vertically Aligned Cadmium Chalcogenide Nanowire Arrays on Muscovite Mica: A Demonstration of Epitaxial Growth Strategy Utama, Muhammad Iqbal Bakti; Peng, Zeping; Chen, Rui Nano Letters, Vol. 11, Issue 8 https://doi.org/10.1021/nl1034495	journal	August 2011
Suppression of Grain Boundaries in Graphene Growth on Superstructured Mn-Cu(111) Surface Chen, Wei; Chen, Hua; Lan, Haiping Physical Review Letters, Vol. 109, Issue 26 https://doi.org/10.1103/PhysRevLett.109.265507	journal	December 2012
Band gap engineering of a soft inorganic compound PbI ₂ by incommensurate van der Waals epitaxy Wang, Yiping; Sun, Yi-Yang; Zhang, Shengbai Applied Physics Letters, Vol. 108, Issue 1 https://doi.org/10.1063/1.4939269	journal	January 2016
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene Kim, Jeehwan; Bayram, Can; Park, Hongsik Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5836	journal	September 2014
Van der Waals heterostructures Geim, A. K.; Grigorieva, I. V. Nature, Vol. 499, Issue 7459, p. 419-425 https://doi.org/10.1038/nature12385	journal	July 2013
Hydrogen dangling bonds induce ferromagnetism in two-dimensional metal-free graphitic-C ₃ N ₄ nanosheets Xu, Kun; Li, Xiuling; Chen, Pengzuo Chemical Science, Vol. 6, Issue 1 https://doi.org/10.1039/C4SC02576H	journal	January 2015
Work Function and Photothreshold of Layered Metal Dichalcogenides Shimada, Toshihiro; Ohuchi, Fumio S.; Parkinson, Bruce A. Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 5A https://doi.org/10.1143/JJAP.33.2696	journal	May 1994
Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template Lin, Zhaoyang; Yin, Anxiang; Mao, Jun Science Advances, Vol. 2, Issue 10 https://doi.org/10.1126/sciadv.1600993	journal	October 2016
Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer Alaskar, Yazeed; Arafin, Shamsul; Wickramaratne, Darshana Advanced Functional Materials, Vol. 24, Issue 42 https://doi.org/10.1002/adfm.201400960	journal	August 2014
Coincident-site lattice matching during van der Waals epitaxy Boschker, Jos E.; Galves, Lauren A.; Flissikowski, Timur Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep18079	journal	December 2015
Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene Li, Xufan; Basile, Leonardo; Huang, Bing ACS Nano, Vol. 9, Issue 8 https://doi.org/10.1021/acsnano.5b01943	journal	July 2015
Controlled van der Waals Epitaxy of Monolayer MoS ₂ Triangular Domains on Graphene Ago, Hiroki; Endo, Hiroko; Solís-Fernández, Pablo ACS Applied Materials & Interfaces, Vol. 7, Issue 9 https://doi.org/10.1021/am508569m	journal	February 2015
Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-Layer MoS ₂ Films onto Arbitrary Substrates Gurarslan, Alper; Yu, Yifei; Su, Liqin ACS Nano, Vol. 8, Issue 11 https://doi.org/10.1021/nn5057673	journal	November 2014
Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy Bakti Utama, Muhammad Iqbal; Zhang, Qing; Zhang, Jun Nanoscale, Vol. 5, Issue 9 https://doi.org/10.1039/c3nr34011b	journal	January 2013
Incommensurate van der Waals Epitaxy of Nanowire Arrays: A Case Study with ZnO on Muscovite Mica Substrates Utama, Muhammad Iqbal Bakti; Belarre, Francisco J.; Magen, Cesar Nano Letters, Vol. 12, Issue 4 https://doi.org/10.1021/nl300554t	journal	January 2012
Characterization and Modeling of CdS/CdTe Heterojunction Thin-Film Solar Cell for High Efficiency Performance Fardi, Hamid; Buny, Fatima International Journal of Photoenergy, Vol. 2013 https://doi.org/10.1155/2013/576952	journal	January 2013
Theoretical and Experimental Investigations on the Growth of SnS van der Waals Epitaxies on Graphene Buffer Layer Leung, Kelvin K.; Wang, Wei; Shu, Haibo Crystal Growth & Design, Vol. 13, Issue 11 https://doi.org/10.1021/cg400916h	journal	September 2013
van der Waals Bonding in Layered Compounds from Advanced Density-Functional First-Principles Calculations Björkman, T.; Gulans, A.; Krasheninnikov, A. V. Physical Review Letters, Vol. 108, Issue 23 https://doi.org/10.1103/PhysRevLett.108.235502	journal	June 2012
Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system Koma, Atsushi Thin Solid Films, Vol. 216, Issue 1 https://doi.org/10.1016/0040-6090(92)90872-9	journal	August 1992
van der Waals epitaxy of CdTe thin film on graphene Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping Applied Physics Letters, Vol. 109, Issue 14 https://doi.org/10.1063/1.4964127	journal	October 2016
Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces Oshima, Chuhei; Nagashima, Ayato Journal of Physics: Condensed Matter, Vol. 9, Issue 1 https://doi.org/10.1088/0953-8984/9/1/004	journal	January 1997
Epitaxy of GaN Nanowires on Graphene Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali Nano Letters, Vol. 16, Issue 8 https://doi.org/10.1021/acs.nanolett.6b01453	journal	July 2016
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth Munshi, A. Mazid; Dheeraj, Dasa L.; Fauske, Vidar T. Nano Letters, Vol. 12, Issue 9 https://doi.org/10.1021/nl3018115	journal	January 2012

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