Topological Dirac line nodes and superconductivity coexist in SnSe at high pressure

Chen, Xuliang; Lu, Pengchao; Wang, Xuefei; Zhou, Yonghui; An, Chao; Zhou, Ying; Xian, Cong; Gao, Hao; Guo, Zhaopeng; Park, Changyong; Hou, Binyang; Peng, Kunling; Zhou, Xiaoyuan; Sun, Jian; Xiong, Yimin; Yang, Zhaorong; Xing, Dingyu; Zhang, Yuheng

doi:10.1103/PhysRevB.96.165123

Title: Topological Dirac line nodes and superconductivity coexist in SnSe at high pressure

Journal Article · Sun Oct 01 00:00:00 EDT 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.96.165123· OSTI ID:1408118

Chen, Xuliang; Lu, Pengchao; Wang, Xuefei; Zhou, Yonghui; An, Chao; Zhou, Ying; Xian, Cong; Gao, Hao; Guo, Zhaopeng; Park, Changyong; Hou, Binyang; Peng, Kunling; Zhou, Xiaoyuan; Sun, Jian; Xiong, Yimin; Yang, Zhaorong; Xing, Dingyu; Zhang, Yuheng

We report on the discovery of a pressure-induced topological and superconducting phase of SnSe, a material which attracts much attention recently due to its superior thermoelectric properties. In situ high-pressure electrical transport and synchrotron x-ray diffraction measurements show that the superconductivity emerges along with the formation of a CsCl-type structural phase of SnSe above around 27 GPa, with a maximum critical temperature of 3.2 K at 39 GPa. Based on ab initio calculations, this CsCl-type SnSe is predicted to be a Dirac line-node (DLN) semimetal in the absence of spin-orbit coupling, whose DLN states are protected by the coexistence of time-reversal and inversion symmetries. These results make CsCl-type SnSe an interesting model platform with simple crystal symmetry to study the interplay of topological physics and superconductivity.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: DOE - BASIC ENERGY SCIENCESNSFDOE-NNSAFOREIGN

OSTI ID:: 1408118

Journal Information:: Physical Review B, Vol. 96, Issue 16; ISSN 2469-9950

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: ENGLISH

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