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Oscillatory electrostatic potential on graphene induced by group IV element decoration

Journal Article · · Scientific Reports
 [1];  [1];  [1];  [2];  [3]
  1. Northeast Normal Univ., Changchun (China). Center for Quantum Sciences. School of Physics
  2. Beijing Technology and Business Univ. (China). Dept. of Chemistry. School of Science
  3. Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy
The structures and electronic properties of partial C, Si and Ge decorated graphene were investigated by first-principles calculations. The calculations show that the interaction between graphene and the decoration patches is weak and the semiconductor patches act as agents for weak electron doping without much disturbing graphene electronic π-bands. Redistribution of electrons due to the partial decoration causes the electrostatic potential lower in the decorated graphene areas, thus induced an electric field across the boundary between the decorated and non-decorated domains. Such an alternating electric field can change normal stochastic adatom diffusion to biased diffusion, leading to selective mass transport.
Research Organization:
Ames Lab. and Iowa State Univ., Ames, IA (United States); Northeast Normal Univ., Changchun (China)
Sponsoring Organization:
National Natural Science Foundation of China (NSFC); Science and Technology Dept. of Jilin Province (China); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-07CH11358
OSTI ID:
1407482
Report Number(s):
IS-J--9479; PII: 13603
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Vol. 7; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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