Local formation of nitrogen-vacancy centers in diamond by swift heavy ions
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator Technology and Applied Physics Division; Ilmenau Univ. of Technology (Germany). Dept. of Microelectronics and Nanoelectric Systems
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry
- GSI Helmholtz Center for Heavy Ion Research, Darmstadt (Germany)
- GSI Helmholtz Center for Heavy Ion Research, Darmstadt (Germany); Technical Univ. of Darmstadt (Germany)
- Ilmenau Univ. of Technology (Germany). Dept. of Microelectronics and Nanoelectric Systems
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator Technology and Applied Physics Division
In this paper, we exposed nitrogen-implanted diamonds to beams of swift heavy ions (~1 GeV, ~4 MeV/u) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV- yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions could enable the formation of three dimensional NV- assemblies over relatively large distances of tens of micrometers. Finally and further, our results show that NV center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); LBNL Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1407217
- Alternate ID(s):
- OSTI ID: 1226578
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 21; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Irradiation of materials with short, intense ion pulses at NDCX-II
|
journal | May 2017 |
Spin properties of NV centers in high-pressure, high-temperature grown diamond
|
journal | November 2018 |
Spin properties of NV centers in high-pressure, high-temperature grown diamond | text | January 2018 |
Review Article: Quantum Nanophotonics in Diamond | preprint | January 2016 |
Photothermal effects during nanodiamond synthesis from a carbon aerogel in a laser-heated diamond anvil cell | preprint | January 2017 |
Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions | text | January 2020 |
Similar Records
Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions
Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond