Gallium-Doped Poly-Si:Ga/SiO₂ Passivated Emitters to n-Cz Wafers With iV_oc >730 mV

Journal Article · Tue Sep 26 00:00:00 EDT 2017 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/JPHOTOV.2017.2748422· OSTI ID:1406184

Young, David L. ^[1]; Lee, Benjamin G. ^[1]; Fogel, Derek ^[1]; Nemeth, William ^[1]; LaSalvia, Vincenzo ^[1]; Theingi, San ^[1]; Page, Matthew ^[1]; Young, Matthew ^[1]; Perkins, Craig ^[1]; Stradins, Paul ^[1]

---

1. National Renewable Energy Lab. (NREL), Golden, CO (United States)

Here, we form gallium-doped poly-Si:Ga/SiO₂ passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al₂O₃, the contacts exhibit i_Voc values of >730 mV with corresponding Joe values of <5 fA/cm². These are among the best-reported values for p-type poly-Si/SiO₂ contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO₂ interface in agreement with its known high diffusivity in SiO₂. This lack of Ga pileup may imply fewer dopant-related defects in the SiO₂, compared with B dopants, and account for the excellent passivation.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot National Laboratory Multiyear Partnership (SuNLaMP)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1406184
• Report Number(s): NREL/JA--5J00-67872
• Journal Information: IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 6 Vol. 7; ISSN 2156-3381
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
gallium
implied open circuit voltage
passivated contacts
silicon
solar cells