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Title: Heterojunction of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

Abstract

The advancement of silicon (Si) technology has led to faster and smaller computers and smart cellphones. Unfortunately, further miniaturization of semiconductor devices will encounter fundamental physics limitations, including short channel effects, high contact resistance, and high heat dissipation, which will deteriorate device energy efficiency. In this project, we have explore into the creation of tunneling field effect transistors (TFETs) and switches without using semiconductors. Since these devices did not involve the use of semiconductors, our approach would have bypassed the above-mentioned limits of Si devices. During the course of this two-year funding period, we have successfully 1) Identify the essential conditions for the synthesis of co-axial hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs), i.e., co-axial BNNTs/CNTs junctions. 2) Investigate the switching behaviors of a series of precursor materials, including a) branching BNNTs/CNTs junctions, b) graphene-BNNTs junctions, and c) quantum-dots functionalized BNNTs (QDs-BNNTs).

Authors:
 [1]
  1. Michigan Technological Univ., Houghton, MI (United States)
Publication Date:
Research Org.:
Michigan Technological Univ., Houghton, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1406128
Report Number(s):
DOE-MTU-Yap-12762
DOE Contract Number:  
SC0012762
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Yap, Yoke Khin. Heterojunction of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization. United States: N. p., 2017. Web. doi:10.2172/1406128.
Yap, Yoke Khin. Heterojunction of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization. United States. https://doi.org/10.2172/1406128
Yap, Yoke Khin. Tue . "Heterojunction of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization". United States. https://doi.org/10.2172/1406128. https://www.osti.gov/servlets/purl/1406128.
@article{osti_1406128,
title = {Heterojunction of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization},
author = {Yap, Yoke Khin},
abstractNote = {The advancement of silicon (Si) technology has led to faster and smaller computers and smart cellphones. Unfortunately, further miniaturization of semiconductor devices will encounter fundamental physics limitations, including short channel effects, high contact resistance, and high heat dissipation, which will deteriorate device energy efficiency. In this project, we have explore into the creation of tunneling field effect transistors (TFETs) and switches without using semiconductors. Since these devices did not involve the use of semiconductors, our approach would have bypassed the above-mentioned limits of Si devices. During the course of this two-year funding period, we have successfully 1) Identify the essential conditions for the synthesis of co-axial hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs), i.e., co-axial BNNTs/CNTs junctions. 2) Investigate the switching behaviors of a series of precursor materials, including a) branching BNNTs/CNTs junctions, b) graphene-BNNTs junctions, and c) quantum-dots functionalized BNNTs (QDs-BNNTs).},
doi = {10.2172/1406128},
url = {https://www.osti.gov/biblio/1406128}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {10}
}