Heterojunction of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

Technical Report · Tue Oct 31 04:00:00 EDT 2017

DOI:https://doi.org/10.2172/1406128· OSTI ID:1406128

Yap, Yoke Khin ^[1]

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1. Michigan Technological Univ., Houghton, MI (United States); Michigan Technological University

The advancement of silicon (Si) technology has led to faster and smaller computers and smart cellphones. Unfortunately, further miniaturization of semiconductor devices will encounter fundamental physics limitations, including short channel effects, high contact resistance, and high heat dissipation, which will deteriorate device energy efficiency. In this project, we have explore into the creation of tunneling field effect transistors (TFETs) and switches without using semiconductors. Since these devices did not involve the use of semiconductors, our approach would have bypassed the above-mentioned limits of Si devices. During the course of this two-year funding period, we have successfully 1) Identify the essential conditions for the synthesis of co-axial hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs), i.e., co-axial BNNTs/CNTs junctions. 2) Investigate the switching behaviors of a series of precursor materials, including a) branching BNNTs/CNTs junctions, b) graphene-BNNTs junctions, and c) quantum-dots functionalized BNNTs (QDs-BNNTs).

• Research Organization: Michigan Technological Univ., Houghton, MI (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• DOE Contract Number: SC0012762
• OSTI ID: 1406128
• Report Number(s): DOE-MTU-Yap--12762
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY