Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

Tiriolo, Raffaele; Rangnekar, Neel; Zhang, Han; Shete, Meera; Bai, Peng; Nelson, John; Karapetrova, Evguenia; Macosko, Christopher W.; Siepmann, Joern Ilja; Lamanna, Ernesto; Lavano, Angelo; Tsapatsis, Michael

doi:10.1002/adfm.201700864

Title: Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

Journal Article · Mon May 08 00:00:00 EDT 2017 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201700864· OSTI ID:1389008

Tiriolo, Raffaele ^[1]; Rangnekar, Neel ^[2]; Zhang, Han ^[2]; Shete, Meera ^[2]; Bai, Peng ^[2]; Nelson, John ^[3]; Karapetrova, Evguenia ^[4]; Macosko, Christopher W. ^[2]; Siepmann, Joern Ilja ^[2]; Lamanna, Ernesto ^[5]; Lavano, Angelo ^[1]; Tsapatsis, Michael ^[2]

Univ. Magna Graecia of Catanzaro, Viale Europa, Catanzaro (Italy). Dept. of Medical and Surgical Sciences
Univ. of Minnesota, Minneapolis, MN (United States). Dept. of Chemical Engineering and Materials Science
Univ. of Minnesota, Minneapolis, MN (United States). Characterization Facility
Argonne National Lab. (ANL), Argonne, IL (United States). Surface Scattering and Microdiffraction, X-ray Science Division
Univ. Magna Graecia of Catanzaro, Viale Europa Catanzaro (Italy). Dept. of Health Sciences

A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a nonthermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal–insulator–metal configuration, highlights the ultralow k ≈ 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E ≈ 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Gas Separations Relevant to Clean Energy Technologies (CGS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001015; AC02-06CH11357; FG02-12ER16362

OSTI ID:: 1389008

Alternate ID(s):: OSTI ID: 1401081

Journal Information:: Advanced Functional Materials, Vol. 27, Issue 25; Related Information: CGS partners with University of California, Berkeley; University of California, Davis; Lawrence Berkeley National Laboratory; University of Minnesota; National Energy Technology Laboratory; Texas A&M University; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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Title: Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

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