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Title: Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

Authors:
 [1];  [2];  [2];  [2];  [3];  [4];  [5];  [2];  [3];  [6];  [1];  [2]
  1. Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy
  2. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA
  3. Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA
  4. Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA
  5. Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA
  6. Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1401081
Grant/Contract Number:
SC0001015; AC02-06CH11357; DEFG02-12ER16362
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 27; Journal Issue: 25; Related Information: CHORUS Timestamp: 2017-10-20 16:14:40; Journal ID: ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Tiriolo, Raffaele, Rangnekar, Neel, Zhang, Han, Shete, Meera, Bai, Peng, Nelson, John, Karapetrova, Evguenia, Macosko, Christopher W., Siepmann, Joern Ilja, Lamanna, Ernesto, Lavano, Angelo, and Tsapatsis, Michael. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus. Germany: N. p., 2017. Web. doi:10.1002/adfm.201700864.
Tiriolo, Raffaele, Rangnekar, Neel, Zhang, Han, Shete, Meera, Bai, Peng, Nelson, John, Karapetrova, Evguenia, Macosko, Christopher W., Siepmann, Joern Ilja, Lamanna, Ernesto, Lavano, Angelo, & Tsapatsis, Michael. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus. Germany. doi:10.1002/adfm.201700864.
Tiriolo, Raffaele, Rangnekar, Neel, Zhang, Han, Shete, Meera, Bai, Peng, Nelson, John, Karapetrova, Evguenia, Macosko, Christopher W., Siepmann, Joern Ilja, Lamanna, Ernesto, Lavano, Angelo, and Tsapatsis, Michael. 2017. "Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus". Germany. doi:10.1002/adfm.201700864.
@article{osti_1401081,
title = {Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus},
author = {Tiriolo, Raffaele and Rangnekar, Neel and Zhang, Han and Shete, Meera and Bai, Peng and Nelson, John and Karapetrova, Evguenia and Macosko, Christopher W. and Siepmann, Joern Ilja and Lamanna, Ernesto and Lavano, Angelo and Tsapatsis, Michael},
abstractNote = {},
doi = {10.1002/adfm.201700864},
journal = {Advanced Functional Materials},
number = 25,
volume = 27,
place = {Germany},
year = 2017,
month = 5
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on May 8, 2018
Publisher's Accepted Manuscript

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  • Here, single-crystal Au is an excellent substrate for electrochemical epitaxial growth due to its chemical inertness, but the high cost of bulk Au single crystals prohibits their use in practical applications. Here, we show that ultrathin epitaxial films of Au electrodeposited onto Si(111), Si(100), and Si(110) wafers can serve as an inexpensive proxy for bulk single-crystal Au for the deposition of epitaxial films of cuprous oxide (Cu 2O). The Au films range in thickness from 7.7 nm for a film deposited for 5 min to 28.3 nm for a film deposited for 30 min. The film thicknesses are measured bymore » low-angle X-ray reflectivity and X-ray Laue oscillations. High-resolution TEM shows that there is not an interfacial SiO x layer between the Si and Au. The Au films deposited on the Si(111) substrates are smoother and have lower mosaic spread than those deposited onto Si(100) and Si(110). The mosaic spread of the Au(111) layer on Si(111) is only 0.15° for a 28.3 nm thick film. Au films deposited onto degenerate Si(111) exhibit ohmic behavior, whereas Au films deposited onto n-type Si(111) with a resistivity of 1.15 Ω·cm are rectifying with a barrier height of 0.85 eV. The Au and the Cu 2O follow the out-of-plane and in-plane orientations of the Si substrates, as determined by X-ray pole figures. The Au and Cu 2O films deposited on Si(100) and Si(110) are both twinned. The films grown on Si(100) have twins with a [221] orientation, and the films grown on Si(110) have twins with a [411] orientation. An interface model is proposed for all Si orientations, in which the –24.9% mismatch for the Au/Si system is reduced to only +0.13% by a coincident site lattice in which 4 unit meshes of Au coincide with 3 unit meshes of Si. Although this study only considers the deposition of epitaxial Cu 2O films on electrodeposited Au/Si, the thin Au films should serve as high-quality substrates for the deposition of a wide variety of epitaxial materials.« less
    Cited by 2
  • Here, single-crystal Au is an excellent substrate for electrochemical epitaxial growth due to its chemical inertness, but the high cost of bulk Au single crystals prohibits their use in practical applications. Here, we show that ultrathin epitaxial films of Au electrodeposited onto Si(111), Si(100), and Si(110) wafers can serve as an inexpensive proxy for bulk single-crystal Au for the deposition of epitaxial films of cuprous oxide (Cu 2O). The Au films range in thickness from 7.7 nm for a film deposited for 5 min to 28.3 nm for a film deposited for 30 min. The film thicknesses are measured bymore » low-angle X-ray reflectivity and X-ray Laue oscillations. High-resolution TEM shows that there is not an interfacial SiO x layer between the Si and Au. The Au films deposited on the Si(111) substrates are smoother and have lower mosaic spread than those deposited onto Si(100) and Si(110). The mosaic spread of the Au(111) layer on Si(111) is only 0.15° for a 28.3 nm thick film. Au films deposited onto degenerate Si(111) exhibit ohmic behavior, whereas Au films deposited onto n-type Si(111) with a resistivity of 1.15 Ω·cm are rectifying with a barrier height of 0.85 eV. The Au and the Cu 2O follow the out-of-plane and in-plane orientations of the Si substrates, as determined by X-ray pole figures. The Au and Cu 2O films deposited on Si(100) and Si(110) are both twinned. The films grown on Si(100) have twins with a [221] orientation, and the films grown on Si(110) have twins with a [411] orientation. An interface model is proposed for all Si orientations, in which the –24.9% mismatch for the Au/Si system is reduced to only +0.13% by a coincident site lattice in which 4 unit meshes of Au coincide with 3 unit meshes of Si. Although this study only considers the deposition of epitaxial Cu 2O films on electrodeposited Au/Si, the thin Au films should serve as high-quality substrates for the deposition of a wide variety of epitaxial materials.« less
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