Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials

Shin, Donghyeop; Saparov, Bayrammurad; Mitzi, David B.

doi:10.1002/aenm.201602366

Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials

Journal Article · Fri Jan 13 00:00:00 EST 2017 · Advanced Energy Materials

DOI:https://doi.org/10.1002/aenm.201602366· OSTI ID:1400611

Shin, Donghyeop ^[1]; Saparov, Bayrammurad ^[1]; Mitzi, David B. ^[1]

Department of Mechanical Engineering and Materials Science Duke University Durham NC 27708 USA, Department of Chemistry Duke University Durham NC 27708 USA

Application of zinc‐blende‐related chalcogenide absorbers such as CdTe and Cu(In,Ga)Se ₂ (CIGSe) has enabled remarkable advancement in laboratory‐ and commercial‐scale thin‐film photovoltaic performance; however concerns remain regarding the toxicity (CdTe) and scarcity (CIGSe/CdTe) of the constituent elements. Recently, kesterite‐based Cu ₂ ZnSn(S,Se) ₄ (CZTSSe) materials have emerged as attractive non‐toxic and earth‐abundant absorber candidates. Despite the similarities between CZTSSe and CIGSe/CdTe, the record power conversion efficiency of CZTSSe solar cells (12.6%) remains significantly lower than that of CIGSe (22.6%) and CdTe (22.1%) devices, with the performance gap primarily being attributed to cationic disordering and associated band tailing. To capture the promise of kesterite‐like materials as prospective “drop‐in” earth‐abundant replacements for closely‐related CIGSe, current research has focused on several key directions to control disorder, including: (i) examination of the interaction between processing conditions and atomic site disorder, (ii) isoelectronic cation substitution to introduce ionic size mismatch, and (iii) structural diversification beyond the zinc‐blende‐type coordination environment. In this review, recent efforts targeting accurate identification and engineering of anti‐site disorder in kesterite‐based CZTSSe are considered. Lessons learned from CZTSSe are applied to other complex chalcogenide semiconductors, in an effort to develop promising pathways to avoid anti‐site disordering and associated band tailing in future high‐performance earth‐abundant photovoltaic technologies.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-06OR23100

OSTI ID:: 1400611

Journal Information:: Advanced Energy Materials, Journal Name: Advanced Energy Materials Journal Issue: 11 Vol. 7; ISSN 1614-6832

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Redetermination of the crystal structure of copper(I) tetrathiovanadate (sulvanite), CU3VS4 Mujica, C.; Carvajal, G.; Llanos, J. Zeitschrift für Kristallographie - New Crystal Structures, Vol. 213, Issue 1-4 https://doi.org/10.1524/ncrs.1998.213.14.12	journal	April 1998
Cu2MnMIVS4 (MIV = Si, Ge, Sn) — analysis of crystal structures and tetrahedra volumes of normal tetrahedral compounds Bernert, Thomas; Pfitzner, Arno Zeitschrift für Kristallographie - Crystalline Materials, Vol. 220, Issue 11 https://doi.org/10.1524/zkri.2005.220.11_2005.968	journal	January 2005
Synthesis and properties of colloidal Cu₂ CdSnS₄ nanocrystals: Synthesis and properties of colloidal Cu₂ CdSnS₄ nanocrystals Liu, Yu-Feng; Ge, Mei-Ying; Luo, Hai-Han JOURNAL OF INFRARED AND MILLIMETER WAVES, Vol. 31, Issue 1 https://doi.org/10.3724/SP.J.1010.2012.00001	journal	February 2012
Structural and Optical Properties of Cu₂MnSnS₄ Thin Film Fabricated by Sol-Gel Technique Chen, Lei Lei; Deng, Hong Mei; Zhang, Ke Zhi Materials Science Forum, Vol. 814 https://doi.org/10.4028/www.scientific.net/MSF.814.39	journal	March 2015
Cu ₂ Sn _{1- x} Ge _x S ₃ ( x = 0.17) Thin-Film Solar Cells with High Conversion Efficiency of 6.0% Umehara, Mitsutaro; Takeda, Yasuhiko; Motohiro, Tomoyoshi Applied Physics Express, Vol. 6, Issue 4 https://doi.org/10.7567/APEX.6.045501	journal	April 2013
Cu ₂ SnS ₃ thin-film solar cells fabricated by sulfurization from NaF/Cu/Sn stacked precursor Nakashima, Mitsuki; Fujimoto, Junya; Yamaguchi, Toshiyuki Applied Physics Express, Vol. 8, Issue 4 https://doi.org/10.7567/APEX.8.042303	journal	April 2015
Improvement of voltage deficit of Ge-incorporated kesterite solar cell with 12.3% conversion efficiency Kim, Shinho; Kim, Kang Min; Tampo, Hitoshi Applied Physics Express, Vol. 9, Issue 10 https://doi.org/10.7567/APEX.9.102301	journal	September 2016
Cu ₂ ZnSnS ₄ Thin Film Solar Cells Utilizing Sulfurization of Metallic Precursor Prepared by Simultaneous Sputtering of Metal Targets Momose, Noritaka; Htay, Myo Than; Yudasaka, Takuto Japanese Journal of Applied Physics, Vol. 50, Issue 1S2 https://doi.org/10.7567/JJAP.50.01BG09	journal	January 2011

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