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Title: Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers

Abstract

Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the optical transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [1];  [1]
  1. Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1400435
Grant/Contract Number:
AC02-76SF00515; W911NF1310309; FA9550-12-1-0488; ECS-9731293
Resource Type:
Journal Article: Published Article
Journal Name:
Optica
Additional Journal Information:
Journal Volume: 4; Journal Issue: 11; Journal ID: ISSN 2334-2536
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Defect-center materials; Quantum optics; Coherent optical effects

Citation Formats

Zhang, Jingyuan Linda, Lagoudakis, Konstantinos G., Tzeng, Yan -Kai, Dory, Constantin, Radulaski, Marina, Kelaita, Yousif, Fischer, Kevin A., Sun, Shuo, Shen, Zhi -Xun, Melosh, Nicholas A., Chu, Steven, and Vuckovic, Jelena. Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers. United States: N. p., 2017. Web. doi:10.1364/OPTICA.4.001317.
Zhang, Jingyuan Linda, Lagoudakis, Konstantinos G., Tzeng, Yan -Kai, Dory, Constantin, Radulaski, Marina, Kelaita, Yousif, Fischer, Kevin A., Sun, Shuo, Shen, Zhi -Xun, Melosh, Nicholas A., Chu, Steven, & Vuckovic, Jelena. Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers. United States. doi:10.1364/OPTICA.4.001317.
Zhang, Jingyuan Linda, Lagoudakis, Konstantinos G., Tzeng, Yan -Kai, Dory, Constantin, Radulaski, Marina, Kelaita, Yousif, Fischer, Kevin A., Sun, Shuo, Shen, Zhi -Xun, Melosh, Nicholas A., Chu, Steven, and Vuckovic, Jelena. 2017. "Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers". United States. doi:10.1364/OPTICA.4.001317.
@article{osti_1400435,
title = {Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers},
author = {Zhang, Jingyuan Linda and Lagoudakis, Konstantinos G. and Tzeng, Yan -Kai and Dory, Constantin and Radulaski, Marina and Kelaita, Yousif and Fischer, Kevin A. and Sun, Shuo and Shen, Zhi -Xun and Melosh, Nicholas A. and Chu, Steven and Vuckovic, Jelena},
abstractNote = {Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the optical transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.},
doi = {10.1364/OPTICA.4.001317},
journal = {Optica},
number = 11,
volume = 4,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1364/OPTICA.4.001317

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  • Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the opticalmore » transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.« less
  • Recent efforts to define microscopic solid-immersion-lenses (SIL) by focused ion beam milling into diamond substrates that are registered to a preselected single photon emitter are summarized. We show how we determine the position of a single emitter with at least 100 nm lateral and 500 nm axial accuracy, and how the milling procedure is optimized. The characteristics of a single emitter, a Nitrogen Vacancy (NV) center in diamond, are measured before and after producing the SIL and compared with each other. A count rate of 1.0 × 10{sup 6} counts/s is achieved with a [111] oriented NV center.
  • The [ital X]-band ESR of thin diamond films deposited from a mixture of 99.5% H[sub 2] and 0.5% CH[sub 4] is compared to those of films similarly prepared from D[sub 2]-CD[sub 4] and H[sub 2]-[sup 13]CH[sub 4] mixtures. Main line and satellites at [plus minus]7.2 G are unaffected by annealing at [ital T][le]1100 [degree]C, but their intensity is reduced upon annealing at [similar to]1500 [degree]C. Since the satellites are absent from the deuterated films, they are attributed to newly identified dangling-bond H centers, possibly on internal surfaces, but more plausibly embedded in the bulk. This is consistent with the [supmore » 13]C relaxation rate, which indicates a uniform distribution of paramagnetic centers.« less
  • Optical evidence of paired Mn{sup 2+} centers has been observed in CaF{sub 2}:Mn by time-resolved laser spectroscopy. The paired Mn{sup 2+} center is associated with a peak shift of the Mn{sup 2+} emisssion towards longer wavelength and a faster component of decay of 500 {mu}s along with a slow decay of 48 ms due to a single Mn{sup 2+} ion. It appear that this center forms a Mn{sup 2+}-{ital F}-center-Mn{sup 2+} complex when the material is {gamma} irradiated. This complex is associated with a thermoluminescence peak near 360 {degree}C and an optical-absorption band near 300 nm. A conversion from amore » Mn{sup 2+}-{ital F}-center-Mn{sup 2+} complex to an {ital F}-center-Mn{sup 2+} complex is observed in phototransferred thermoluminescence and in photobleached optical-absorption spectra.« less